发明申请
- 专利标题： Forming an Intermediate Electrode Between an Ovonic Threshold Switch and a Chalcogenide Memory Element
- 专利标题（中）： 在波形阈值开关和硫族化物记忆元件之间形成中间电极
-
申请号： US12414739申请日： 2009-03-31
-
公开(公告)号： US20090184308A1公开(公告)日： 2009-07-23
- 发明人: John M. Peters
- 申请人： John M. Peters
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some embodiments, reducing leakage.
公开/授权文献
信息查询
IPC分类:
