发明申请
US20090189066A1 ION IMPLANTATION DEVICE CONTROL METHOD, CONTROL SYSTEM THEREOF, CONTROL PROGRAM THEREOF, AND ION IMPLANTATION DEVICE
有权
离子植入装置控制方法，其控制系统及其控制程序及离子植入装置
- 专利标题： ION IMPLANTATION DEVICE CONTROL METHOD, CONTROL SYSTEM THEREOF, CONTROL PROGRAM THEREOF, AND ION IMPLANTATION DEVICE
- 专利标题（中）： 离子植入装置控制方法，其控制系统及其控制程序及离子植入装置
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申请号： US11813937申请日： 2006-02-23
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公开(公告)号： US20090189066A1公开(公告)日： 2009-07-30
- 发明人: Seiji Ogata , Hidekazu Yokoo , Masasumi Araki
- 申请人： Seiji Ogata , Hidekazu Yokoo , Masasumi Araki
- 申请人地址： JP Kanagawa-ken
- 专利权人： ULVAC, INC.
- 当前专利权人： ULVAC, INC.
- 当前专利权人地址： JP Kanagawa-ken
- 优先权： JP2005-048584 20050224
- 国际申请： PCT/JP2006/303300 WO 20060223
- 主分类号： B01D59/44
- IPC分类号： B01D59/44 ; H01J49/00
摘要：
A control method of an ion implantation device that radiates an ion beam emitted from an ion source via an optical element onto a material to be treated, includes the steps of: measuring the spatial distribution of the ion beam in the vicinity of the material to be treated; estimating the emittance, which is the spatial and angular distribution of the ion beam of the ion source, from the measured spatial distribution, by using an ion beam trajectory calculation method; calculating the operating conditions of the optical element so that the ion beam in the vicinity of the material to be treated has a desired spatial distribution, by using the estimated emittance and the trajectory calculation method; and operating the ion implantation device by using the calculated operating conditions of the optical element.
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