公开(公告)号：US07777206B2

公开(公告)日：2010-08-17

申请号：US11813937

申请日：2007-07-13

申请人： Seiji Ogata ,  Hidekazu Yokoo ,  Masasumi Araki

发明人： Seiji Ogata ,  Hidekazu Yokoo ,  Masasumi Araki

IPC分类号： A61N5/00

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01L21/265

摘要： A control method of an ion implantation device that radiates an ion beam emitted from an ion source via an optical element onto a material to be treated, includes the steps of: measuring the spatial distribution of the ion beam in the vicinity of the material to be treated; estimating the emittance, which is the spatial and angular distribution of the ion beam of the ion source, from the measured spatial distribution, by using an ion beam trajectory calculation method; calculating the operating conditions of the optical element so that the ion beam in the vicinity of the material to be treated has a desired spatial distribution, by using the estimated emittance and the trajectory calculation method; and operating the ion implantation device by using the calculated operating conditions of the optical element.

摘要翻译： 将从离子源经由光学元件射出的离子束照射到待处理材料上的离子注入装置的控制方法包括以下步骤：测定材料附近的离子束的空间分布 治疗 通过使用离子束轨迹计算方法，从测量的空间分布估计离子源的离子束的空间和角度分布的发射度; 通过使用估计的发射率和轨迹计算方法来计算光学元件的操作条件，使得待处理材料附近的离子束具有期望的空间分布; 以及通过使用计算出的光学元件的操作条件操作离子注入装置。

公开(公告)号：US20090072164A1

公开(公告)日：2009-03-19

申请号：US12279653

申请日：2007-02-15

申请人： Seiji Ogata ,  Ryota Fukui ,  Hidekazu Yokoo ,  Tsutomu Nishihashi

发明人： Seiji Ogata ,  Ryota Fukui ,  Hidekazu Yokoo ,  Tsutomu Nishihashi

IPC分类号： G21K5/00

CPC分类号： H01J37/3171 ,  H01J2237/05 ,  H01J2237/083 ,  H01J2237/31703

摘要： An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.

摘要翻译： 用于通过从离子源提取氢离子或稀土离子来制造单晶膜的离子注入机，用第一扇形电磁体选择期望的离子，用扫描仪扫描离子，使离子与第二扇形电磁体 ，并将其植入基底; 离子源被配置为位于第一扇区电磁体的入射侧焦点附近。 在这种情况下，当离子源的提取部分的孔径为圆形并且偏转表面中的入射侧焦点和与第一扇形电磁体垂直的入射侧焦点一致时，通过第一扇形电磁体之后的离子束变得完全 平行于两个表面，斑点形状变成圆形。

公开(公告)号：US08341854B2

公开(公告)日：2013-01-01

申请号：US12635046

申请日：2009-12-10

申请人： Seiji Ogata ,  Kyuzo Nakamura ,  Katsuhiko Itou ,  Takashi Hanamoto ,  Masaki Itou

发明人： Seiji Ogata ,  Kyuzo Nakamura ,  Katsuhiko Itou ,  Takashi Hanamoto ,  Masaki Itou

IPC分类号： F26B5/06 ,  F26B13/30

CPC分类号： F26B5/065

摘要： A vacuum freeze-drying apparatus capable of rapid drying is provided. A cold trap for drying, which is arranged inside a drying chamber, is set to a low temperature of −70 degrees Celsius or below, and heat is supplied to frozen particles on a conveyor belt to a degree such that the frozen particles do not melt. The amount of the liquid component evaporating from the frozen particles increases, and the amount of the liquid component entering the frozen particles decreases so that the time for drying the frozen particles is shortened.

摘要翻译： 提供能够快速干燥的真空冷冻干燥装置。 设置在干燥室内的用于干燥的冷阱设定在-70摄氏度或更低的低温，并且将热量输送到输送带上的冷冻颗粒，使得冷冻颗粒不熔化 。 从冷冻颗粒蒸发的液体成分的量增加，进入冷冻颗粒的液体成分的量减少，从而缩短了冷冻颗粒的干燥时间。

公开(公告)号：US20100107437A1

公开(公告)日：2010-05-06

申请号：US12635046

申请日：2009-12-10

申请人： Seiji Ogata ,  Kyuzo Nakamura ,  Katsuhiko Itou ,  Takashi Hanamoto ,  Masaki Itou

发明人： Seiji Ogata ,  Kyuzo Nakamura ,  Katsuhiko Itou ,  Takashi Hanamoto ,  Masaki Itou

IPC分类号： F26B5/06 ,  F26B13/30

CPC分类号： F26B5/065

摘要： A vacuum freeze-drying apparatus capable of rapid drying is provided. A cold trap for drying, which is arranged inside a drying chamber, is set to a low temperature of −70 degrees Celsius or below, and heat is supplied to frozen particles on a conveyor belt to a degree such that the frozen particles do not melt. The amount of the liquid component evaporating from the frozen particles increases, and the amount of the liquid component entering the frozen particles decreases so that the time for drying the frozen particles is shortened.

摘要翻译： 提供能够快速干燥的真空冷冻干燥装置。 设置在干燥室内的用于干燥的冷阱设定在-70摄氏度或更低的低温，并且将热量输送到输送带上的冷冻颗粒，使得冷冻颗粒不熔化 。 从冷冻颗粒蒸发的液体成分的量增加，进入冷冻颗粒的液体成分的量减少，从而缩短了冷冻颗粒的干燥时间。

公开(公告)号：US07847271B2

公开(公告)日：2010-12-07

申请号：US12279653

申请日：2007-02-15

申请人： Seiji Ogata ,  Ryota Fukui ,  Hidekazu Yokoo ,  Tsutomu Nishihashi

发明人： Seiji Ogata ,  Ryota Fukui ,  Hidekazu Yokoo ,  Tsutomu Nishihashi

IPC分类号： H01J37/317 ,  H01J37/256

CPC分类号： H01J37/3171 ,  H01J2237/05 ,  H01J2237/083 ,  H01J2237/31703

摘要： An ion implanter for manufacturing a single crystal film by extracting a hydrogen ion or a rare-gas ion from an ion source, selects a desired ion with a first sector electromagnet, scanning the ion with a scanner, collimates the ion with a second sector electromagnet, and implants it into a substrate; the ion source is configured to be located close to the entrance side focal point of the first sector electromagnet. In this case, when an aperture of an extraction section of the ion source is circular and entrance side focal points in a deflection surface and a surface perpendicular thereto in the first sector electromagnet are coincident, the ion beam after passing the first sector electromagnet becomes completely parallel in the two surfaces and the spot shape becomes a circle.

摘要翻译： 用于通过从离子源提取氢离子或稀土离子来制造单晶膜的离子注入机，用第一扇形电磁体选择期望的离子，用扫描仪扫描离子，使离子与第二扇形电磁体 ，并将其植入基底; 离子源被配置为位于第一扇区电磁体的入射侧焦点附近。 在这种情况下，当离子源的提取部分的孔径为圆形并且偏转表面中的入射侧焦点和与第一扇形电磁体垂直的入射侧焦点一致时，通过第一扇形电磁体之后的离子束变得完全 平行于两个表面，斑点形状变成圆形。

公开(公告)号：US20090189066A1

公开(公告)日：2009-07-30

申请号：US11813937

申请日：2006-02-23

申请人： Seiji Ogata ,  Hidekazu Yokoo ,  Masasumi Araki

发明人： Seiji Ogata ,  Hidekazu Yokoo ,  Masasumi Araki

IPC分类号： B01D59/44 ,  H01J49/00

CPC分类号： H01J37/3171 ,  H01J37/304 ,  H01L21/265

摘要： A control method of an ion implantation device that radiates an ion beam emitted from an ion source via an optical element onto a material to be treated, includes the steps of: measuring the spatial distribution of the ion beam in the vicinity of the material to be treated; estimating the emittance, which is the spatial and angular distribution of the ion beam of the ion source, from the measured spatial distribution, by using an ion beam trajectory calculation method; calculating the operating conditions of the optical element so that the ion beam in the vicinity of the material to be treated has a desired spatial distribution, by using the estimated emittance and the trajectory calculation method; and operating the ion implantation device by using the calculated operating conditions of the optical element.

摘要翻译： 将从离子源经由光学元件射出的离子束照射到待处理材料上的离子注入装置的控制方法包括以下步骤：测定材料附近的离子束的空间分布 治疗 通过使用离子束轨迹计算方法，从测量的空间分布估计离子源的离子束的空间和角度分布的发射度; 通过使用估计的发射率和轨迹计算方法来计算光学元件的操作条件，使得待处理材料附近的离子束具有期望的空间分布; 以及通过使用计算出的光学元件的操作条件操作离子注入装置。

公开(公告)号：US20080054192A1

公开(公告)日：2008-03-06

申请号：US11575197

申请日：2005-11-14

申请人： Seiji Ogata ,  Yuzo Sakurada ,  Masayuki Sekiguchi ,  Tsutomu Nishihashi

发明人： Seiji Ogata ,  Yuzo Sakurada ,  Masayuki Sekiguchi ,  Tsutomu Nishihashi

IPC分类号： H01J37/317

CPC分类号： H01L21/265 ,  H01J37/05 ,  H01J37/147 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/30483

摘要： An ion implantation device that suppresses diffusion of an ion beam, can finely control a scanning waveform, and can obtain a large scanning angle of about 10°. In the ion implantation device, first, second, and third chambers are arranged in predetermined places on a beam line, first and second gaps intervene between the first chamber and the second chamber and between the second chamber and the third chamber. The second chamber is electrically insulated from the first and third chambers via first and second electrode pairs attached to the first and second gaps, respectively. The first and second electrode pairs obliquely cross a standard axis of the ion beam at a predetermined angle in opposite directions, and the second chamber is connected to a scanning power source that applies an electric potential having a desired scanning waveform.

摘要翻译： 抑制离子束扩散的离子注入装置能够精细地控制扫描波形，能够获得大约10°的大的扫描角度。 在离子注入装置中，第一，第二和第三腔室布置在束线上的预定位置，第一和第二间隙插入在第一腔室和第二腔室之间以及第二腔室和第三腔室之间。 第二室通过分别连接到第一和第二间隙的第一和第二电极对与第一和第三室电绝缘。 第一电极对和第二电极对以相反方向以预定角度倾斜地离开离子束的标准轴，并且第二室连接到施加具有期望的扫描波形的电位的扫描电源。

公开(公告)号：US07511288B2

公开(公告)日：2009-03-31

申请号：US11575197

申请日：2005-11-14

申请人： Seiji Ogata ,  Yuzo Sakurada ,  Masayuki Sekiguchi ,  Tsutomu Nishihashi

发明人： Seiji Ogata ,  Yuzo Sakurada ,  Masayuki Sekiguchi ,  Tsutomu Nishihashi

IPC分类号： H01J37/02

CPC分类号： H01L21/265 ,  H01J37/05 ,  H01J37/147 ,  H01J37/1474 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/30483

摘要： To provide an ion implantation device which suppresses diffusion of an ion beam, can finely control a scanning waveform and can obtain a large scanning angle of about 10°.In the ion implantation device, first, second and third chambers 12A, 14A and 16A are arranged in predetermined places on a beam line, first and second gaps 20A and 22A intervene between the first chamber 12A and the second chamber 14A and between the second chamber 14A and the third chamber 16A, the second chamber 14A is electrically insulated from the first and third chambers 12A and 16A via first and second electrode pairs 26A and 28A attached to the first and second gaps 20A and 22A, respectively, the first and second electrode pairs 26A and 28A obliquely cross a standard axis J of the ion beam at a predetermined angle in opposite directions, and the second chamber 14 is connected to a scanning power source 40A which applies an electric potential having desired scanning waveform.

摘要翻译： 为了提供抑制离子束扩散的离子注入装置，可以精细地控制扫描波形，并且可以获得大约10°的大扫描角度。 在离子注入装置中，第一，第二和第三室12A，14A和16A布置在束线上的预定位置，第一和第二间隙20A和22A插入在第一室12A和第二室14A之间以及第二室 14A和第三室16A中，第二室14A经由分别连接到第一和第二间隙20A和22A的第一和第二电极对26A和28A与第一和第三室12A和16A电绝缘，第一和第二电极 对26A和28A以相反方向以预定角度倾斜地跨越离子束的标准轴线J，并且第二腔室14连接到扫描电源40A，扫描电源40A施加具有期望的扫描波形的电位。

公开(公告)号：US5751002A

公开(公告)日：1998-05-12

申请号：US594320

申请日：1996-01-30

申请人： Seiji Ogata ,  Yuzo Sakurada ,  Nakaya Chida ,  Takeshi Hisamune

发明人： Seiji Ogata ,  Yuzo Sakurada ,  Nakaya Chida ,  Takeshi Hisamune

IPC分类号： C23C14/48 ,  H01J37/05 ,  H01J37/317 ,  H01L21/265 ,  H01J37/147

CPC分类号： H01J37/3171 ,  H01J2237/057 ,  H01J2237/1526

摘要： An ion implantation apparatus is provided with an ion source and a mass spectrometer having an analyzer magnet and is adapted to take out ions having a predetermined kinetic energy and mass from other ions produced in the ion source. It further includes a scanner system for scanning an ion beam of the take-out ions and irradiating the ion beam onto a substrate. The scanner system includes a deflection electro-magnet which is disposed downstream of the mass spectrometer for deflecting the ion beam in a predetermined plane with respect to a reference axis. A second vacuum chamber portion through which the ion beam passes in the magnetic field of the deflection electro-magnet is provided and a first vacuum chamber portion electrically independent of the second vacuum chamber portion is also provided through which the ion beam passes in the magnetic field of the mass analyzer. A third vacuum chamber portion is also provided through which the ion beam passes and in which the substrate is arranged for irradiation. The second vacuum chamber portion is applied by a potential for modulating the potential of the ion be and the deflection electro-magnet defects the modulated ion beam so that the deflection angle of the ion beam is modulated and the ion beam is scanned and irradiated onto the substrate.

摘要翻译： 离子注入装置设置有离子源和具有分析器磁体的质谱仪，并且适于从离子源中产生的其它离子中取出具有预定动能和质量的离子。 它还包括扫描仪系统，用于扫描取出离子的离子束并将离子束照射到衬底上。 扫描仪系统包括偏转电磁体，其设置在质谱仪的下游，用于使离子束相对于参考轴线在预定平面中偏转。 提供离子束在偏转电磁体的磁场中通过的第二真空室部分，并且还提供与第二真空室部分电独立的第一真空室部分，离子束通过该第一真空室部分在磁场中通过 的质量分析仪。 还提供第三真空室部分，离子束通过该部分，衬底被布置成用于照射。 通过用于调制离子的电位的电位施加第二真空室部分，并且偏转电磁体使调制的离子束缺陷，使得离子束的偏转角被调制并且离子束被扫描并照射到 基质。