- 专利标题： CMOS image sensor and method of fabricating the same
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申请号： US12379111申请日： 2009-02-12
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公开(公告)号： US20090189206A1公开(公告)日： 2009-07-30
- 发明人: Chang Hun Han
- 申请人： Chang Hun Han
- 优先权： KRP2004-113801 20041228
- 主分类号： H01L31/112
- IPC分类号： H01L31/112
摘要：
A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.
公开/授权文献
- US07838917B2 CMOS image sensor and method of fabricating the same 公开/授权日：2010-11-23
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