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    ACRYLIC COPOLYMER WITH HIGH HEAT RESISTANCE AND HIGH STRENGTH, AND OPTICAL FILM COMPRISING THE SAME
    4.
    发明申请
    ACRYLIC COPOLYMER WITH HIGH HEAT RESISTANCE AND HIGH STRENGTH, AND OPTICAL FILM COMPRISING THE SAME 有权
    具有高耐热性和高强度的丙烯酸共聚物和包含其的光学膜

    公开(公告)号：US20130144023A1

    公开(公告)日：2013-06-06

    申请号：US13702911

    申请日：2011-06-08

    申请人： Su-Kyung Kim ,  Da-Eun Sung ,  Chang-Hun Han ,  Byung-Il Kang ,  Jae-Bum Seo ,  Eun-Jung Choi ,  Byoung-Kue Chun ,  Yu-Taek Sung

    发明人： Su-Kyung Kim ,  Da-Eun Sung ,  Chang-Hun Han ,  Byung-Il Kang ,  Jae-Bum Seo ,  Eun-Jung Choi ,  Byoung-Kue Chun ,  Yu-Taek Sung

    IPC分类号： C08F220/10

    CPC分类号： C08F220/10 ,  C08F220/18 ,  C08F220/34 ,  G02B1/04 ,  C08L33/08

    摘要： The present invention relates to an acrylic copolymer having high heat resistance and high strength, and an optical film comprising the same, and more particularly, to an acrylic copolymer for optical films in which alkyl (meth)acrylate monomers; (meth)acrylate monomers comprising aromatic rings and/or aliphatic rings; and (meth)acrylamide monomers are included and polymerized. An acrylic copolymer according to the present invention is excellent in heat resistance while maintaining transparency. Further, an optical film comprising a compound resin including the acrylic copolymer has superior transparency and heat resistance and is excellent in formability, adhesion, retardation properties, and durability.

    摘要翻译： 本发明涉及具有高耐热性和高强度的丙烯酸共聚物和包含该丙烯酸共聚物的光学膜，更具体地说，涉及一种其中（甲基）丙烯酸烷基酯单体的光学膜的丙烯酸共聚物; 包含芳环和/或脂族环的（甲基）丙烯酸酯单体; 和（甲基）丙烯酰胺单体并聚合。 根据本发明的丙烯酸共聚物在保持透明性的同时耐热性优异。 此外，包含包含丙烯酸共聚物的复合树脂的光学膜具有优异的透明性和耐热性，并且成型性，粘附性，延迟性和耐久性优异。

    Image sensor and method for manufacturing the same
    6.
    发明授权
    Image sensor and method for manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号：US07880205B2

    公开(公告)日：2011-02-01

    申请号：US12234991

    申请日：2008-09-22

    申请人： Chang Hun Han

    发明人： Chang Hun Han

    IPC分类号： H01L27/108 ,  H01L29/04 ,  H01L31/062 ,  H01L31/113 ,  H01L31/036

    CPC分类号： H01L27/14643 ,  H01L27/14636

    摘要： Disclosed is an image sensor. The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric layer including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric layer in correspondence with the unit pixels, the plurality of bottom electrodes includes bottom electrodes having at least two different sizes, a photodiode formed on the interlayer dielectric layer including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels.

    摘要翻译： 公开了一种图像传感器。 图像传感器包括：包括单位像素的半导体衬底;在半导体衬底上形成有金属互连的层间绝缘层;对应于单位像素形成在层间绝缘层上的多个底部电极，多个底部电极包括底部电极 具有至少两种不同尺寸的光电二极管，形成在包括底部电极的层间电介质层上的光电二极管，以及与单位像素相对应的在光电二极管上形成的滤色器。

    CMOS image sensor and method of fabricating the same
    7.
    发明授权
    CMOS image sensor and method of fabricating the same 有权
    CMOS图像传感器及其制造方法

    公开(公告)号：US07838917B2

    公开(公告)日：2010-11-23

    申请号：US12379111

    申请日：2009-02-12

    申请人： Chang Hun Han

    发明人： Chang Hun Han

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/14689 ,  H01L27/14603 ,  H01L27/1463

    摘要： A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.

    摘要翻译： 一种CMOS图像传感器及其制造方法，其中CMOS图像传感器在光电二极管和隔离层之间的边界区域具有最小化的暗电流。 本发明包括在衬底的器件隔离区域中形成的第一导电型掺杂区域，围绕隔离区域的第一导电型掺杂区域和形成在隔离层和第一导电型之间的介电层 掺杂区域，其中所述第一导电型掺杂区域和所述介电层位于所述隔离层和第二导电型扩散区域之间。

    Method for manufacturing CMOS image sensor
    8.
    发明授权
    Method for manufacturing CMOS image sensor 失效
    CMOS图像传感器的制造方法

    公开(公告)号：US07572663B2

    公开(公告)日：2009-08-11

    申请号：US11615096

    申请日：2006-12-22

    申请人： Chang Hun Han

    发明人： Chang Hun Han

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14643

    摘要： A method for manufacturing a CMOS image sensor is provided. The method can include forming an interlayer dielectric layer on a semiconductor substrate including a gate electrode, photodiode area, and LDD region; selectively removing the interlayer dielectric layer such that the interlayer dielectric layer remains on the photodiode area; performing a first heat treatment process; sequentially forming a first insulating layer and a second insulating layer on the semiconductor substrate, where the etching selectivity of the first insulating layer is different from the etching selectivity of the second insulating layer; selectively etching the second insulating layer to form spacers on sidewalls of the gate electrode; selectively removing the first insulating layer to expose a source/drain area and forming a high-density N-type diffusion area in the exposed source/drain area; performing a second heat treatment process; and forming a metal silicide layer the high-density N-type diffusion area.

    摘要翻译： 提供了一种用于制造CMOS图像传感器的方法。 该方法可以包括在包括栅电极，光电二极管区域和LDD区域的半导体衬底上形成层间电介质层; 选择性地去除所述层间电介质层，使得所述层间电介质层保留在所述光电二极管区域上; 执行第一热处理过程; 在所述半导体衬底上依次形成第一绝缘层和第二绝缘层，其中所述第一绝缘层的蚀刻选择性不同于所述第二绝缘层的蚀刻选择性; 选择性地蚀刻第二绝缘层以在栅电极的侧壁上形成间隔物; 选择性地去除第一绝缘层以暴露源极/漏极区域并在暴露的源极/漏极区域中形成高密度N型扩散区域; 执行第二热处理过程; 以及形成高密度N型扩散区域的金属硅化物层。

    CMOS image sensor and method for manufacturing the same
    9.
    发明授权
    CMOS image sensor and method for manufacturing the same 失效
    CMOS图像传感器及其制造方法

    公开(公告)号：US07560674B2

    公开(公告)日：2009-07-14

    申请号：US11486489

    申请日：2006-07-13

    申请人： Chang Hun Han

    发明人： Chang Hun Han

    IPC分类号： H01L27/00

    CPC分类号： H01L27/14645 ,  H01L27/14601 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/14689

    摘要： Disclosed are a CMOS image sensor and a manufacturing method thereof. The present CMOS image sensor comprises: first, second, and third photo diodes and a plurality of transistors spaced at a predetermined distance in a semiconductor substrate; a diffusion blocking layer on substantially an entire surface of the substrate, including an opening therein exposing at least one of the photo diodes; an interlevel dielectric layer over the entire surface of the substrate, covering the diffusion blocking layer; first, second and third color filter layers over the interlevel dielectric layer, respectively corresponding to the first, second and third photo diodes, and a plurality of microlenses over the color filter layers, corresponding to each color filter layer.

    摘要翻译： 公开了CMOS图像传感器及其制造方法。 本CMOS图像传感器包括：第一，第二和第三光电二极管和在半导体衬底中以预定距离隔开的多个晶体管; 在基底的整个表面上的扩散阻挡层，包括其中暴露至少一个光电二极管的开口; 在衬底的整个表面上的层间电介质层，覆盖扩散阻挡层; 分别对应于第一，第二和第三光电二极管的层间电介质层上的第一，第二和第三滤色器层以及对应于每个滤色器层的滤色器层上的多个微透镜。

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    图像传感器及其制造方法

    公开(公告)号：US20090166628A1

    公开(公告)日：2009-07-02

    申请号：US12344493

    申请日：2008-12-27

    申请人： Chang-Hun Han

    发明人： Chang-Hun Han

    IPC分类号： H01L31/0376 ,  H01L31/18

    CPC分类号： H01L31/105 ,  H01L27/14632 ,  H01L27/14692 ,  H01L31/0236 ,  H01L31/1055 ,  Y02E10/50

    摘要： An image sensor includes a first substrate having a circuitry including a wire formed therein and a photodiode formed above the circuitry. An unevenness is formed at the top of the photodiode. The unevenness may, for example, be formed by selectively etching the top of the photodiode and may act to maximize light absorption by the photodiode.

    摘要翻译： 图像传感器包括具有包括形成在其中的导线的电路的第一基板和形成在电路之上的光电二极管。 在光电二极管的顶部形成凹凸。 可以通过选择性地蚀刻光电二极管的顶部而形成凹凸，并且可以起到使光电二极管的光吸收最大化的作用。