- 专利标题: Magnetoresistive element and method of manufacturing the same
- 专利标题(中): 磁阻元件及其制造方法
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申请号: US12320668申请日: 2009-01-30
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公开(公告)号: US20090190262A1公开(公告)日: 2009-07-30
- 发明人: Shuichi Murakami , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- 申请人: Shuichi Murakami , Hideaki Fukuzawa , Hiromi Yuasa , Yoshihiko Fuji
- 申请人地址: JP Tokyo
- 专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人: KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-019365 20080130
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; G11B5/48 ; B05D3/00
摘要:
A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer formed of an oxygen- or nitrogen-containing material and arranged in the magnetization pinned layer, or in the magnetization free layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which a crystalline orientation plane of the functional layer is different from a crystalline orientation plane of its upper or lower adjacent layer.
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