发明申请
- 专利标题： ENHANCEMENT OF OPTICAL POLARIZATION OF NITRIDE LIGHT-EMITTING DIODES BY INCREASED INDIUM INCORPORATION
- 专利标题（中）： 硝基发光二极管的光学极化增强增加了印度投资
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申请号： US12364258申请日： 2009-02-02
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公开(公告)号： US20090194761A1公开(公告)日： 2009-08-06
- 发明人: Hisashi Masui , Hisashi Yamada , Kenji Iso , James S. Speck , Shuji Nakamura , Steven P. DenBaars
- 申请人： Hisashi Masui , Hisashi Yamada , Kenji Iso , James S. Speck , Shuji Nakamura , Steven P. DenBaars
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/30
摘要：
An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.
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