发明申请
US20090197424A1 Substrate processing apparatus and method for manufacturing semiconductor device
审中-公开
基板处理装置及半导体装置的制造方法
- 专利标题: Substrate processing apparatus and method for manufacturing semiconductor device
- 专利标题(中): 基板处理装置及半导体装置的制造方法
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申请号: US12320577申请日: 2009-01-29
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公开(公告)号: US20090197424A1公开(公告)日: 2009-08-06
- 发明人: Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
- 申请人: Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
- 申请人地址: JP Tokyo
- 专利权人: HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人: HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2008-020761 20080131; JP2008-290104 20081112; JP2008-312661 20081208
- 主分类号: H01L21/30
- IPC分类号: H01L21/30 ; C23C16/54
摘要:
A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.
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