公开(公告)号：US20090197424A1

公开(公告)日：2009-08-06

申请号：US12320577

申请日：2009-01-29

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： H01L21/30 ,  C23C16/54

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus according to the present invention promotes supplying gases to spaces between adjacent substrates without reducing the number of substrates which can be collectively processed. The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

摘要翻译： 根据本发明的基板处理装置促进向相邻基板之间的空间供应气体，而不减少可以共同处理的基板的数量。 基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴 并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

公开(公告)号：US08461062B2

公开(公告)日：2013-06-11

申请号：US13331258

申请日：2011-12-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： The substrate processing apparatus includes: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; at least one processing gas supply nozzle which extends running along an inner wall of the processing chamber in the stacking direction of the substrates and supplies a processing gas to the inside of the processing chamber; a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich the processing gas supply nozzle from both sides thereof along the circumferential direction of the substrates and which supply the inactive gas to the inside of the processing chamber; and an exhaust line for exhausting the inside of the processing chamber.

摘要翻译： 基板处理装置包括：处理室，用于以水平姿态存储和处理以多级堆叠的基板; 至少一个处理气体供给喷嘴，其沿着所述处理室的内壁在所述基板的层叠方向上延伸，并且将处理气体供给到所述处理室的内部; 一对非活性气体供给喷嘴，沿着基板的堆叠方向沿着处理室的内壁延伸，并且沿着该基板的圆周方向从其两侧夹着处理气体供给喷嘴 并且将惰性气体供应到处理室的内部; 以及用于排出处理室内部的排气管线。

公开(公告)号：US20090223448A1

公开(公告)日：2009-09-10

申请号：US12379420

申请日：2009-02-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： B05C9/06

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

摘要翻译： 本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，该处理气体供应喷嘴沿着基板的堆叠方向沿着处理室的内壁延伸并且供应 处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此 从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

公开(公告)号：US08828141B2

公开(公告)日：2014-09-09

申请号：US12379420

申请日：2009-02-20

申请人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

发明人： Masanori Sakai ,  Yuji Takebayashi ,  Tsutomu Kato ,  Shinya Sasaki ,  Hirohisa Yamazaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306 ,  C23C16/40 ,  C23C16/44 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4584 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45546 ,  C23C16/45591

摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.

摘要翻译： 本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，所述处理气体供应喷嘴沿着基板的堆叠方向沿处理室的内壁延伸并且供应 处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此 从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

公开(公告)号：US20090071505A1

公开(公告)日：2009-03-19

申请号：US12188440

申请日：2008-08-08

申请人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda

发明人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda

IPC分类号： B08B7/00 ,  C23C16/00

CPC分类号： C23C16/4405 ,  B08B7/0035

摘要： Provided is a cleaning method which can efficiently remove a film, such as a high dielectric constant oxide film, which is difficult to be etched by a fluorine-containing gas alone. As a cleaning method of a substrate processing apparatus which forms a desired film on a wafer by supplying a source gas, there is provided a cleaning method for removing a film attached to the inside of a processing chamber. The cleaning method includes: a step of supplying a halogen-containing gas into the processing chamber; and a step of supplying a fluorine-containing gas into the processing chamber, after starting the supply of the halogen-containing gas, wherein, in the step of supplying the fluorine-containing gas, the fluorine-containing gas is supplied while supplying the halogen-containing gas into the processing chamber.

摘要翻译： 本发明提供一种能够有效地除去难以仅通过含氟气体进行蚀刻的高介电常数氧化膜等的膜的清洗方法。 作为通过供给源气体在晶片上形成期望的膜的基板处理装置的清洗方法，提供了一种用于除去附着在处理室内部的膜的清洗方法。 清洗方法包括：向处理室供给含卤素气体的步骤; 以及在开始供给含卤素气体之后向处理室供给含氟气体的步骤，其中在供给含氟气体的步骤中，供应含氟气体，同时供给卤素 的气体进入处理室。

公开(公告)号：US20100186774A1

公开(公告)日：2010-07-29

申请号：US12671189

申请日：2008-09-09

申请人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda ,  Takashi Tanioka

发明人： Hironobu Miya ,  Yuji Takebayashi ,  Masanori Sakai ,  Shinya Sasaki ,  Hirohisa Yamazaki ,  Atsuhiko Suda ,  Takashi Tanioka

IPC分类号： B08B9/00 ,  H01L21/469

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01L21/67109 ,  H01L21/67757 ,  H01L21/67769

摘要： Provided is a cleaning method for removing a film adhered inside a processing chamber of a substrate processing apparatus used for forming a desired film on a substrate by supplying a material gas for film formation. The method is provided with a step of supplying a halogen containing gas into the processing chamber, and a step of supplying a fluorine containing gas into the processing chamber while supplying the halogen containing gas, after starting to supply the halogen containing gas. In the step of supplying the fluorine containing gas, a supply flow volume ratio of the halogen containing gas to the entire gas supplied into the processing chamber is within a range of 20-25%.

摘要翻译： 提供了一种清洁方法，用于通过提供用于成膜的材料气体来除去附着在用于在基板上形成期望的膜的基板处理装置的处理室内的膜。 该方法具有向处理室供给含卤素气体的步骤，以及在开始供应含卤素气体之后，在供应含卤素气体的同时向处理室供应含氟气体的步骤。 在供给含氟气体的步骤中，含卤素气体与供给到处理室的全部气体的供给流量比在20〜25％的范围内。

公开(公告)号：US20100009079A1

公开(公告)日：2010-01-14

申请号：US12457779

申请日：2009-06-22

申请人： Hirohisa Yamazaki ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

发明人： Hirohisa Yamazaki ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

IPC分类号： C23C16/455 ,  C23C16/40

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45557 ,  H01L21/02112 ,  H01L21/02205

摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

摘要翻译： 提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

公开(公告)号：US20120079985A1

公开(公告)日：2012-04-05

申请号：US13313736

申请日：2011-12-07

申请人： Hirohisa YAMAZAKI ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

发明人： Hirohisa YAMAZAKI ,  Yuji Takebayashi ,  Masanori Sakai ,  Tsutomu Kato

IPC分类号： C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45527 ,  C23C16/45557 ,  H01L21/02112 ,  H01L21/02205

摘要： There is provided a substrate processing method, comprising the steps of: supplying source gas into a processing chamber in which substrates are accommodated; removing the source gas and an intermediate body of the source gas remained in the processing chamber; supplying ozone into the processing chamber in a state of substantially stopping exhaust of an atmosphere in the processing chamber; and removing the ozone and the intermediate body of the ozone remained in the processing chamber; with these steps repeated multiple number of times, to thereby form an oxide film on the surface of the substrates by supplying the source gas and the ozone alternately so as not to be mixed with each other.

摘要翻译： 提供了一种基板处理方法，包括以下步骤：将源气体供应到容纳基板的处理室中; 去除源气体和源气体的中间体残留在处理室中; 在基本上停止排出处理室中的气氛的状态下将臭氧供给到处理室中; 并且除去臭氧和中间体的臭氧残留在处理室中; 这些步骤重复多次，由此通过交替地供给源气体和臭氧而不使其彼此混合而在基板的表面上形成氧化膜。

公开(公告)号：US08481434B2

公开(公告)日：2013-07-09

申请号：US12216596

申请日：2008-07-08

申请人： Hironobu Miya ,  Eisuke Nishitani ,  Yuji Takebayashi ,  Masanori Sakai ,  Hirohisa Yamazaki ,  Toshinori Shibata ,  Minoru Inoue

发明人： Hironobu Miya ,  Eisuke Nishitani ,  Yuji Takebayashi ,  Masanori Sakai ,  Hirohisa Yamazaki ,  Toshinori Shibata ,  Minoru Inoue

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： C23C16/4405 ,  H01L21/3141 ,  H01L21/31645

摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

公开(公告)号：US20090130860A1

公开(公告)日：2009-05-21

申请号：US12216596

申请日：2008-07-08

申请人： Hironobu Miya ,  Eisuke Nishitani ,  Yuji Takebayashi ,  Masanori Sakai ,  Hirohisa Yamazaki ,  Toshinori Shibata ,  Minoru Inoue

发明人： Hironobu Miya ,  Eisuke Nishitani ,  Yuji Takebayashi ,  Masanori Sakai ,  Hirohisa Yamazaki ,  Toshinori Shibata ,  Minoru Inoue

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： C23C16/4405 ,  H01L21/3141 ,  H01L21/31645

摘要： To remove the deposit including a high dielectric constant film deposited on an inside of a processing chamber, by using a cleaning gas activated only by heat. The method includes the steps of: loading a substrate or a plurality of substrates into the processing chamber; performing processing to deposit the high dielectric constant film on the substrate by supplying processing gas into the processing chamber; unloading the processed substrate from the inside of the processing chamber; and cleaning the inside of the processing chamber by supplying a halide gas and an oxygen based gas into the processing chamber, and removing the deposit including the high dielectric constant film deposited on the inside of the processing chamber, and in the step of cleaning the inside of the processing chamber, the concentration of the oxygen based gas in the halide gas and the oxygen based gas is set to be less than 7%.

摘要翻译： 为了除去沉积在处理室内部的高介电常数膜的沉积物，通过使用仅通过加热活化的清洗气体。 该方法包括以下步骤：将衬底或多个衬底装载到处理室中; 进行处理，通过向处理室供给处理气体，将高介电常数膜沉积在基板上; 从处理室的内部卸载经处理的基板; 以及通过向所述处理室中供给卤化物气体和氧气基气体来清洁所述处理室的内部，以及去除包括沉积在所述处理室内部的所述高介电常数膜的沉积物，以及在所述处理室的内部清洁步骤 处理室中的卤化物气体和氧气基气体中的氧基气体的浓度设定为小于7％。