发明申请
- 专利标题： Process for Preparing a Dielectric Interlayer Film Containing Silicon Beta Zeolite
- 专利标题（中）： 制备含硅β沸石的介电层间膜的方法
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申请号： US12356201申请日： 2009-01-20
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公开(公告)号： US20090197426A1公开(公告)日： 2009-08-06
- 发明人: Hayim Abrevaya , Richard R. Willis , Stephen T. Wilson
- 申请人： Hayim Abrevaya , Richard R. Willis , Stephen T. Wilson
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; B01J29/04
摘要：
A process for forming a zeolite beta dielectric layer onto a substrate such as a silicon wafer has been developed. The zeolite beta is characterized in that it has an aluminum concentration from about 0.1 to about 2.0 wt. %, and has crystallites from about 5 to about 40 nanometers. The process involves first dealuminating a starting zeolite beta, then preparing a slurry of the dealuminated zeolite beta followed by coating a substrate, e.g. silicon wafer with the slurry, heating to form a zeolite beta film and treating the zeolite beta with a silylating agent.
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