发明申请
- 专利标题： SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING THE SAME
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12348988申请日： 2009-01-06
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公开(公告)号： US20090200679A1公开(公告)日： 2009-08-13
- 发明人: Yoshimichi Harada , Masami Suzuki , Yoshihiro Nabe , Yuji Takaoka , Tatsuo Suemasu , Hideyuki Wada , Masanobu Saruta
- 申请人： Yoshimichi Harada , Masami Suzuki , Yoshihiro Nabe , Yuji Takaoka , Tatsuo Suemasu , Hideyuki Wada , Masanobu Saruta
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： SONY CORPORATION,FUJIKURA LTD
- 当前专利权人： SONY CORPORATION,FUJIKURA LTD
- 当前专利权人地址： JP Tokyo JP Tokyo
- 优先权： JP2008-002553 20080109
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/768
摘要：
A semiconductor apparatus including a semiconductor substrate, an insulating layer, a via hole, and a through-hole interconnection is provided. The insulating layer is formed on the semiconductor substrate. The via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has a conductive layer formed on an insulating layer in the via hole. The surface of the insulating layer formed on the inner surface of the via hole is substantially planarized by filling a recessed portion on a boundary between the semiconductor substrate and the insulating layer formed on the semiconductor substrate.
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