发明申请
- 专利标题： METHOD FOR FABRICATING DEVICE STRUCTURES HAVING A VARIATION IN ELECTRICAL CONDUCTIVITY
- 专利标题（中）： 用于制造具有电导率变化的器件结构的方法
-
申请号： US12030598申请日： 2008-02-13
-
公开(公告)号： US20090203185A1公开(公告)日： 2009-08-13
- 发明人: Elgin Kiok Boone Quek , Lee Wee Teo , Shyue Seng Tan
- 申请人： Elgin Kiok Boone Quek , Lee Wee Teo , Shyue Seng Tan
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/02
摘要：
A method for forming device structures having a variation in electrical conductivity includes forming a device structure and a radiation absorbing layer overlying the device structure. The radiation absorbing layer has a spatial variation and radiation absorbing characteristics, such that upon irradiating the device structure, the radiation absorbing layer attenuates the intensity of the radiation so that a variation in dopant activation takes place within the device structure. Accordingly, device structures are formed having a variation in electrical resistance independent of the physical size of the device structures.
公开/授权文献
信息查询
IPC分类:
