发明申请
US20090203220A1 Method for Reducing an Unevenness of a Surface and Method for Making a Semiconductor Device 有权
降低表面不均匀的方法及制造半导体器件的方法

  • 专利标题: Method for Reducing an Unevenness of a Surface and Method for Making a Semiconductor Device
  • 专利标题(中): 降低表面不均匀的方法及制造半导体器件的方法
  • 申请号: US12029262
    申请日: 2008-02-11
  • 公开(公告)号: US20090203220A1
    公开(公告)日: 2009-08-13
  • 发明人: Joern PlagmannHolger Poehle
  • 申请人: Joern PlagmannHolger Poehle
  • 主分类号: H01L21/31
  • IPC分类号: H01L21/31
Method for Reducing an Unevenness of a Surface and Method for Making a Semiconductor Device
摘要:
In order to reduce an unevenness of a surface of a body, a sacrificial layer is applied to the surface, a chemical-mechanical polishing of the sacrificial layer and material of said body is performed to reduce the unevenness of the surface, and a remainder of the sacrificial layer, if any, may be removed.
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