发明申请
- 专利标题: Method To Improve Mask Critical Dimension Uniformity (CDU)
- 专利标题(中): 提高面膜临界尺寸均匀度(CDU)的方法
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申请号: US12031501申请日: 2008-02-14
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公开(公告)号: US20090206057A1公开(公告)日: 2009-08-20
- 发明人: I-Hsiung Huang , Chi-Lun Lu , Heng-Jen Lee , Sheng-Chi Chin , Yao-Ching Ku
- 申请人: I-Hsiung Huang , Chi-Lun Lu , Heng-Jen Lee , Sheng-Chi Chin , Yao-Ching Ku
- 申请人地址: TW Hsin-Chu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: C23F1/08
- IPC分类号: C23F1/08
摘要:
A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.
公开/授权文献
- US08609545B2 Method to improve mask critical dimension uniformity (CDU) 公开/授权日:2013-12-17
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