发明申请
- 专利标题： Diode and resistive memory device structures
- 专利标题（中）： 二极管和电阻式存储器件结构
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申请号： US12072588申请日： 2008-02-27
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公开(公告)号： US20090212283A1公开(公告)日： 2009-08-27
- 发明人: Manuj Rathor , An Chen , Steven Avanzino , Suzette K. Pangrle
- 申请人： Manuj Rathor , An Chen , Steven Avanzino , Suzette K. Pangrle
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L29/04 ; H01L29/24
摘要：
In an electronic device, a diode and a resistive memory device are connected in series. The diode may take a variety of forms, including oxide or silicon layers, and one of the layers of the diode may make up a layer of the resistive memory device which is in series with that diode.
公开/授权文献
- US08035099B2 Diode and resistive memory device structures 公开/授权日：2011-10-11
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