发明申请
- 专利标题: Semiconductor Memory Devices Including Diagonal Bit Lines
- 专利标题(中): 包括对角位线的半导体存储器件
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申请号: US12465234申请日: 2009-05-13
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公开(公告)号: US20090218610A1公开(公告)日: 2009-09-03
- 发明人: Don-Hoon Goo , Han-Ku Cho , Joo-Tac Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
- 申请人: Don-Hoon Goo , Han-Ku Cho , Joo-Tac Moon , Sang-Gyun Woo , Gi-Sung Yeo , Kyoung-Yun Baek
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2004-80460 20041008
- 主分类号: H01L27/108
- IPC分类号: H01L27/108
摘要:
A semiconductor memory device may include a semiconductor substrate having a plurality of active regions wherein each active region has a length in a direction of a first axis and a width in a direction of a second axis. The length may be greater than the width, and the plurality of active regions may be provided in a plurality of columns in the direction of the second axis. A plurality of wordline pairs may be provided on the substrate, with each wordline pair crossing active regions of a respective column of active regions defining a drain portion of each active region between wordlines of the respective wordline pair. A plurality of bitlines on the substrate may cross the plurality of wordline pairs, with each bitline being electrically coupled to a drain portion of a respective active region of each column, and with each bitline crossing drain portions of active regions of adjacent columns in different directions so that different portions of a same bitline are aligned in different directions on different active regions of adjacent columns.
公开/授权文献
- US08013375B2 Semiconductor memory devices including diagonal bit lines 公开/授权日:2011-09-06