发明申请
US20090218687A1 Semiconductor Chip with Passivation Layer Comprising Metal Interconnect and Contact Pads
有权
具有包括金属互连和接触垫的钝化层的半导体芯片
- 专利标题： Semiconductor Chip with Passivation Layer Comprising Metal Interconnect and Contact Pads
- 专利标题（中）： 具有包括金属互连和接触垫的钝化层的半导体芯片
-
申请号： US12464896申请日： 2009-05-13
-
公开(公告)号： US20090218687A1公开(公告)日： 2009-09-03
- 发明人: Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin
- 申请人： Chiu-Ming Chou , Chien-Kang Chou , Ching-San Lin , Mou-Shiung Lin
- 申请人地址： TW Hsinchu
- 专利权人： MEGICA CORPORATION
- 当前专利权人： MEGICA CORPORATION
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L23/498
- IPC分类号： H01L23/498
摘要：
The invention provides a semiconductor chip comprising a semiconductor substrate comprising a MOS device, an interconnecting structure over said semiconductor substrate, and a metal bump over said MOS device, wherein said metal bump has more than 50 percent by weight of gold and has a height of between 8 and 50 microns.
公开/授权文献
信息查询
IPC分类:
