发明申请
- 专利标题: BACK-GATE DECODE PERSONALIZATION
- 专利标题(中): 后门解码个人化
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申请号: US12039233申请日: 2008-02-28
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公开(公告)号: US20090219778A1公开(公告)日: 2009-09-03
- 发明人: Kerry Bernstein , Wilfried Haensch
- 申请人: Kerry Bernstein , Wilfried Haensch
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 主分类号: G11C8/10
- IPC分类号: G11C8/10
摘要:
A novel methodology for the construction and operation of logical circuits and gates that makes use of and contact to a fourth (4th) terminal (substrates/bodies) of MOSFET devices is implemented by the present invention to realize a novel decode personalization. The novel construction and operation of the decode personalization provides for maintaining body-contacted MOSFET devices at a lower threshold voltage (VTh) when actively on (to increase overdrive and performance), and at a higher relative threshold voltage when off (to reduce leakage power). Because the threshold potential of a transistor moves inversely to its body potential, the body of each device is tied to the inverse of the device's drain voltage to achieve such a desirable threshold potential modulation effect for improved device, circuit, gate, decode personalization and logical family operation.
公开/授权文献
- US07652947B2 Back-gate decode personalization 公开/授权日:2010-01-26
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