发明申请
- 专利标题: GRADATED PHOTOMASK AND ITS FABRICATION PROCESS
- 专利标题(中): 分级光电及其制造工艺
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申请号: US12066203申请日: 2006-09-19
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公开(公告)号: US20090220867A1公开(公告)日: 2009-09-03
- 发明人: Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
- 申请人: Junji Fujikawa , Shu Shimada , Yuuichi Yoshida , Shiho Sasaki , Tsuyoshi Amano , Kimio Ito , Nobuhito Toyama , Hiroshi Mohri
- 申请人地址: JP TOKYO
- 专利权人: DAI NIPPON PRINTING CO., LTD
- 当前专利权人: DAI NIPPON PRINTING CO., LTD
- 当前专利权人地址: JP TOKYO
- 优先权: JP2005-273601 20050921
- 国际申请: PCT/JP2006/318892 WO 20060919
- 主分类号: G03F1/00
- IPC分类号: G03F1/00
摘要:
The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semitransparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.
公开/授权文献
- US08124301B2 Gradated photomask and its fabrication process 公开/授权日:2012-02-28
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