公开(公告)号：US07947415B2

公开(公告)日：2011-05-24

申请号：US12395800

申请日：2009-03-02

申请人： Tsuyoshi Amano ,  Hiroyuki Shigemura

发明人： Tsuyoshi Amano ,  Hiroyuki Shigemura

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7076

摘要： A main object of the invention is to provide a reflective mask for EUV lithography, which may detect an alignment mark by transmission. The invention achieves the object by providing a reflective mask comprising a substrate, a multilayer formed on one side of the substrate, an intermediate layer formed on the multilayer, an absorber formed in pattern on the substrate on which the multilayer and the intermediate layer are formed, and a conductive layer formed on the other side of the substrate, wherein the pattern of the absorber constitutes a circuit pattern and an alignment mark, and in an alignment region where the alignment mark is provided, the other side of the substrate is exposed.

摘要翻译： 本发明的主要目的是提供一种用于EUV光刻的反射掩模，其可通过透射来检测对准标记。 本发明通过提供一种反射掩模，通过提供一种反射掩模来实现，该反射掩模包括基板，形成在基板的一侧上的多层，形成在多层上的中间层，形成在其上形成有多层和中间层的基板上的图案的吸收体 以及形成在所述基板的另一侧的导电层，其中所述吸收体的图案构成电路图案和对准标记，并且在设置有所述对准标记的取向区域中，所述基板的另一侧露出。

公开(公告)号：US20090220867A1

公开(公告)日：2009-09-03

申请号：US12066203

申请日：2006-09-19

申请人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

发明人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/50

摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semitransparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.

摘要翻译： 本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够 半透明薄膜在遮光罩上具有良好的台阶覆盖率。 光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜 所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

公开(公告)号：US08124301B2

公开(公告)日：2012-02-28

申请号：US12066203

申请日：2006-09-19

申请人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

发明人： Junji Fujikawa ,  Shu Shimada ,  Yuuichi Yoshida ,  Shiho Sasaki ,  Tsuyoshi Amano ,  Kimio Ito ,  Nobuhito Toyama ,  Hiroshi Mohri

IPC分类号： G03F1/00 ,  G03F9/00

CPC分类号： G03F1/46 ,  G03F1/50

摘要： The invention provides a gradated photomask for reducing photolithography steps and its fabrication process, which make use of a generally available photomask blank, prevents the reflectance of a light shield film from growing high, makes alignment easy during the formation of a semitransparent film, and enables the semi-transparent film on a light shield pattern with good step coverage. A photomask (100) comprises a mixture of a light shield area including a light shield film (114) having a desired pattern on a transparent substrate wherein a film forming the pattern is substantially opaque to photolithographic light, a semitransparent film (113) that transmits the photolithographic light at a desired transmittance, and the light shield film (114) and the semitransparent film (113) are stacked on the transparent substrate (101) in that order; a semi-transparent area wherein there is only the semitransparent film (113); and a transmissive area there is neither the light shield film (114) nor the semitransparent film (113), and is characterized in that the semitransparent film (113) has an antireflection function with respect to the photolithographic light.

摘要翻译： 本发明提供了一种用于减少光刻步骤的渐变光掩模及其制造工艺，其使用通常可获得的光掩模坯料防止遮光膜的反射率增长，使得在形成半透明膜期间容易对准，并且使得能够 半透明薄膜在遮光罩上具有良好的台阶覆盖率。 光掩模（100）包括在透明基板上包括具有期望图案的遮光膜（114）的遮光区域的混合物，其中形成图案的膜对光刻光基本上不透明;透射膜（113），透射膜 所述透光性的光刻光以及遮光膜（114）和半透明膜（113）依次层叠在透明基板（101）上; 半透明区域，其中仅有半透明膜（113）; 透光区域既不存在遮光膜（114）也不存在半透明膜（113），其特征在于，半透明膜（113）相对于光刻光具有防反射功能。

公开(公告)号：US20090233188A1

公开(公告)日：2009-09-17

申请号：US12395800

申请日：2009-03-02

申请人： Tsuyoshi Amano ,  Hiroyuki Shigemura

发明人： Tsuyoshi Amano ,  Hiroyuki Shigemura

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/7076

摘要： A main object of the invention is to provide a reflective mask for EUV lithography, which may detect an alignment mark by transmission. The invention achieves the object by providing a reflective mask comprising a substrate, a multilayer formed on one side of the substrate, an intermediate layer formed on the multilayer, an absorber formed in pattern on the substrate on which the multilayer and the intermediate layer are formed, and a conductive layer formed on the other side of the substrate, wherein the pattern of the absorber constitutes a circuit pattern and an alignment mark, and in an alignment region where the alignment mark is provided, the other side of the substrate is exposed.

摘要翻译： 本发明的主要目的是提供一种用于EUV光刻的反射掩模，其可通过透射来检测对准标记。 本发明通过提供一种反射掩模，通过提供一种反射掩模来实现，该反射掩模包括基板，形成在基板的一侧上的多层，形成在多层上的中间层，形成在其上形成有多层和中间层的基板上的图案的吸收体 以及形成在所述基板的另一侧的导电层，其中所述吸收体的图案构成电路图案和对准标记，并且在设置有所述对准标记的取向区域中，所述基板的另一侧露出。