发明申请
- 专利标题： SOLAR CELL AND FABRICATION METHOD USING CRYSTALLINE SILICON BASED ON LOWER GRADE FEEDSTOCK MATERIALS
- 专利标题（中）： 基于低级材料的晶体硅太阳能电池和制造方法
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申请号： US12045259申请日： 2008-03-10
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公开(公告)号： US20090223549A1公开(公告)日： 2009-09-10
- 发明人: Kamel Ounadjela , Jean Patrice Rakotoniaina , Martin Kaes , Dirk Zickermann , Alain Blosse , Abdellatif Zerga , Matthias Heuer , Fritz Kirscht
- 申请人： Kamel Ounadjela , Jean Patrice Rakotoniaina , Martin Kaes , Dirk Zickermann , Alain Blosse , Abdellatif Zerga , Matthias Heuer , Fritz Kirscht
- 申请人地址： US CA Menlo Park
- 专利权人： CaliSolar, Inc.
- 当前专利权人： CaliSolar, Inc.
- 当前专利权人地址： US CA Menlo Park
- 主分类号： H01L31/042
- IPC分类号： H01L31/042 ; H01L31/00
摘要：
Formation of a solar cell device from upgraded metallurgical grade silicon which has received at least one defect engineering process and including a low contact resistance electrical path. An anti-reflective coating is formed on an emitter layer and back contacts are formed on a back surface of the bulk silicon substrate. This photovoltaic device may be fired to form a back surface field at a temperature sufficiently low to avoid reversal of previous defect engineering processes. The process further forms openings in the anti-reflective coating and a low contact resistance metal layer, such as nickel layer, over the openings in the anti-reflective coating. The process may anneal the low contact resistance metal layer to form n-doped portion and complete an electrically conduct path to the n-doped layer. This low temperature metallization (e.g.,