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    LARGE GRAIN, MULTI-CRYSTALLINE SEMICONDUCTOR INGOT FORMATION METHOD AND SYSTEM
    3.
    发明申请
    LARGE GRAIN, MULTI-CRYSTALLINE SEMICONDUCTOR INGOT FORMATION METHOD AND SYSTEM 审中-公开
    大颗粒，多晶半导体成像方法与系统

    公开(公告)号：US20080257254A1

    公开(公告)日：2008-10-23

    申请号：US11736390

    申请日：2007-04-17

    申请人： Dieter Linke ,  Matthias Heuer ,  Fritz Kirscht ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

    发明人： Dieter Linke ,  Matthias Heuer ,  Fritz Kirscht ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

    IPC分类号： C30B15/20

    CPC分类号： C30B11/002 ,  C01B33/037 ,  C30B11/003 ,  C30B28/06 ,  C30B29/06 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1008

    摘要： Techniques for the formation of a large grain, multi-crystalline semiconductor ingot and include forming a silicon melt in a crucible, the crucible capable of locally controlling thermal gradients within the silicon melt. The local control of thermal gradients preferentially forms silicon crystals in predetermined regions within the silicon melt by locally reducing temperatures is the predetermined regions. The method and system control the rate at which the silicon crystals form using local control of thermal gradients for inducing the silicon crystals to obtain preferentially maximal sizes and, thereby, reducing the number of grains for a given volume. The process continues the thermal gradient control and the rate control step to form a multicrystalline silicon ingot having reduced numbers of grains for a given volume of the silicon ingot.

    摘要翻译： 用于形成大晶粒多晶半导体锭的技术包括在坩埚中形成硅熔体，所述坩埚能够局部地控制硅熔体内的热梯度。 热梯度的局部控制优先在硅熔体内的预定区域中形成硅晶体，其中局部还原温度是预定区域。 该方法和系统通过局部控制热梯度来控制硅晶体的形成速率，以诱导硅晶体优先获得最大尺寸，从而减少给定体积的晶粒数。 该过程继续进行热梯度控制和速率控制步骤以形成对于给定体积的硅锭具有减少的晶粒数量的多晶硅锭。

    Method and system for forming a silicon ingot using a low-grade silicon feedstock
    4.
    发明授权
    Method and system for forming a silicon ingot using a low-grade silicon feedstock 有权
    使用低等级硅原料形成硅锭的方法和系统

    公开(公告)号：US08882912B2

    公开(公告)日：2014-11-11

    申请号：US13034956

    申请日：2011-02-25

    申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

    发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

    IPC分类号： C30B11/00 ,  H01L31/18

    CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1024

    摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.

    摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。

    Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation
    5.
    发明授权
    Semiconductor wafer pre-process annealing and gettering method and system for solar cell formation 有权
    半导体晶片预处理退火和吸收太阳能电池形成的方法和系统

    公开(公告)号：US08008107B2

    公开(公告)日：2011-08-30

    申请号：US11648127

    申请日：2006-12-30

    申请人： Fritz Kirscht ,  Kamel Ounadjela ,  Jean Patrice Rakotoniana ,  Dieter Linke

    发明人： Fritz Kirscht ,  Kamel Ounadjela ,  Jean Patrice Rakotoniana ,  Dieter Linke

    IPC分类号： H01L21/00

    CPC分类号： H01L31/18 ,  H01L21/304 ,  H01L21/3221 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T83/04 ,  Y10T83/0453

    摘要： Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered. Multicrystalline semiconductor wafers having grain boundaries with impurities may also undergo the annealing and gettering of dispersed defects to the grain boundaries, further increasing the semiconductor substrate purity levels.

    摘要翻译： 这里公开了用于退火和吸收太阳能电池半导体晶片的太阳能电池预处理方法和系统的技术，所述太阳能电池半导体晶片具有不期望的高过渡金属，杂质和其它缺陷的分散。 该工艺在太阳能电池半导体（例如硅）晶片上形成表面污染物层。 半导体晶片的表面与表面污染物层一样接收和保持杂质。 较低质量的半导体晶片包括在退火工艺中从半导体体积吸收而形成杂质簇朝向表面污染物层的分散缺陷。 杂质簇形成在表面污染物层内，同时增加晶片区域中的纯度水平，分散的缺陷从该区域中得到。 通过冷却进行退火以保留杂质簇，从而在杂质吸收的区域保持半导体晶片的增加的纯度水平。 具有杂质晶界的多晶半导体晶片也可以经历退火和吸收分散的缺陷到晶界，进一步提高半导体衬底纯度水平。

    METHOD AND SYSTEM FOR REMOVING IMPURITIES FROM LOW-GRADE CRYSTALLINE SILICON WAFERS
    6.
    发明申请
    METHOD AND SYSTEM FOR REMOVING IMPURITIES FROM LOW-GRADE CRYSTALLINE SILICON WAFERS 审中-公开
    用于从低等级晶体硅陶瓷中去除污染物的方法和系统

    公开(公告)号：US20080197454A1

    公开(公告)日：2008-08-21

    申请号：US11676095

    申请日：2007-02-16

    申请人： Jean Patrice Rakotoniana ,  Matthias Heuer ,  Fritz Kirscht ,  Dieter Linke ,  Kamel Ounadjela

    发明人： Jean Patrice Rakotoniana ,  Matthias Heuer ,  Fritz Kirscht ,  Dieter Linke ,  Kamel Ounadjela

    IPC分类号： H01L29/30 ,  H01L21/306 ,  H01L21/322

    CPC分类号： H01L31/186 ,  H01L21/322 ,  H01L31/04 ,  Y02E10/50 ,  Y02P70/521

    摘要： Techniques are here disclosed for a solar cell pre-processing. The method and system remove impurities from low-grade crystalline semiconductor wafers and include forming a low-grade semiconductor wafer having a substrate having high impurity content. The process and system damage at least one surface of the semiconductor wafer either in the semiconductor wafer forming step or in a separate step to form a region on the surface that includes a plurality of gettering centers. The gettering centers attract impurities from the substrate during subsequent processing. The subsequent processes include diffusing impurities from the substrate using a phosphorus gettering process that includes impregnating the surface with a phosphorus material for facilitating the formation of impurity clusters associated with the gettering centers. Then, the process and system remove from the a portion having the impregnated phosphorus material and the impurity clusters, thereby yielding a semiconductor wafer having a substrate having a generally reduced impurity content.

    摘要翻译： 这里公开了用于太阳能电池预处理的技术。 该方法和系统从低级晶体半导体晶片中除去杂质，并且包括形成具有杂质含量高的衬底的低等级半导体晶片。 该工艺和系统在半导体晶片形成步骤中或在单独的步骤中损坏半导体晶片的至少一个表面，以在表面上形成包括多个吸气中心的区域。 吸附中心在后续处理过程中从衬底吸引杂质。 随后的方法包括使用磷吸除方法从基底扩散杂质，该磷吸收方法包括用磷材料浸渍表面以便于形成与吸气中心相关的杂质簇。 然后，从具有浸渍的磷材料和杂质簇的部分去除工艺和系统，从而产生具有通常降低的杂质含量的衬底的半导体晶片。

    Method and system for controlling resistivity in ingots made of compensated feedstock silicon
    7.
    发明授权
    Method and system for controlling resistivity in ingots made of compensated feedstock silicon 有权
    由补偿原料硅制成的锭的电阻率的方法和系统

    公开(公告)号：US08968467B2

    公开(公告)日：2015-03-03

    申请号：US12618577

    申请日：2009-11-13

    申请人： Fritz Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    发明人： Fritz Kirscht ,  Marcin Walerysiak ,  Matthias Heuer ,  Anis Jouini ,  Kamel Ounadjela

    IPC分类号： C30B15/00 ,  C30B11/00 ,  C30B11/04 ,  C30B29/06

    CPC分类号： H01L22/26 ,  C30B11/006 ,  C30B11/04 ,  C30B29/06 ,  H01L31/0288 ,  H01L31/182 ,  H01L31/1876

    摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

    摘要翻译： 用于控制从补偿的原料硅材料形成硅锭中的电阻率的技术准备补偿的升级冶金硅原料以便熔化以形成硅熔体。 补偿的升级冶金硅原料提供半导体主要是单一类型（p型或n型），其过程评估硼和磷的浓度并加入预定量的硼，磷，铝和/或镓。 该方法进一步用硼，磷，铝和/或镓熔化硅原料，以形成熔融硅溶液，从而进行定向凝固，并保持硅在整个锭中的电阻率的均匀性。 可以任选地在铝和/或镓中加入平衡量的磷。 也可以在晶锭形成期间重复地测量电阻率，并且可以重复地或连续地响应地添加另外的掺杂剂。

    Method and system for forming a silicon ingot using a low-grade silicon feedstock
    8.
    发明授权
    Method and system for forming a silicon ingot using a low-grade silicon feedstock 有权
    使用低等级硅原料形成硅锭的方法和系统

    公开(公告)号：US07955433B2

    公开(公告)日：2011-06-07

    申请号：US11828734

    申请日：2007-07-26

    申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

    发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

    IPC分类号： C01B33/02 ,  C01B33/037 ,  C30B15/10 ,  C30B15/12

    CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1024

    摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.

    摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。

    QUALITY CONTROL PROCESS FOR UMG-SI FEEDSTOCK
    9.
    发明申请
    QUALITY CONTROL PROCESS FOR UMG-SI FEEDSTOCK 失效
    UMG-SI FEEDSTOCK质量控制程序

    公开(公告)号：US20100327890A1

    公开(公告)日：2010-12-30

    申请号：US12770688

    申请日：2010-04-29

    申请人： Kamel Ounadjela ,  Marcin Walerysiak ,  Anis Jouini ,  Matthias Heuer ,  Omar Sidelkheir ,  Alain Blosse ,  Fritz Kirscht

    发明人： Kamel Ounadjela ,  Marcin Walerysiak ,  Anis Jouini ,  Matthias Heuer ,  Omar Sidelkheir ,  Alain Blosse ,  Fritz Kirscht

    IPC分类号： G01R31/26

    CPC分类号： C01B33/037 ,  Y10T117/1088 ,  Y10T117/1092

    摘要： A quality control process for determining the concentrations of boron and phosphorous in a UMG-Si feedstock batch is provided. A silicon test ingot is formed by the directional solidification of molten UMG-Si from a UMG-Si feedstock batch. The resistivity of the silicon test ingot is measured from top to bottom. Then, the resistivity profile of the silicon test ingot is mapped. From the resistivity profile of the silicon test ingot, the concentrations of boron and phosphorous of the UMG-Si silicon feedstock batch are calculated. Additionally, multiple test ingots may be grown simultaneously, with each test ingot corresponding to a UMG-Si feedstock batch, in a multi-crucible crystal grower.

    摘要翻译： 提供了一种用于测定UMG-Si原料批中硼和磷浓度的质量控制过程。 通过来自UMG-Si原料批次的熔融UMG-Si的定向凝固形成硅测试锭。 硅测试块的电阻率从上到下测量。 然后，映射硅测试锭的电阻率分布。 根据硅试块的电阻率分布，计算出UMG-Si硅原料批次中硼和磷的浓度。 另外，在多坩埚晶体种植者中，可以同时生长多个测试锭，每个测试锭对应于UMG-Si原料批次。

    METHOD AND SYSTEM FOR FORMING A SILICON INGOT USING A LOW-GRADE SILICON FEEDSTOCK
    10.
    发明申请
    METHOD AND SYSTEM FOR FORMING A SILICON INGOT USING A LOW-GRADE SILICON FEEDSTOCK 有权
    使用低等级硅胶进料形成硅胶的方法和系统

    公开(公告)号：US20090028773A1

    公开(公告)日：2009-01-29

    申请号：US11828734

    申请日：2007-07-26

    申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

    发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

    IPC分类号： C01B33/037 ,  B01J19/02

    CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1024

    摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.

    摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。