发明申请
- 专利标题： Light emitting diode and manufacturing method thereof
- 专利标题（中）： 发光二极管及其制造方法
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申请号： US12073736申请日： 2008-03-10
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公开(公告)号： US20090224272A1公开(公告)日： 2009-09-10
- 发明人: Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
- 申请人： Kuo-Hui Yu , Yu-Cheng Yang , An-Ru Lin , Tsun-Kai Ko , Wei-Shou Chen , Yi-Wen Ku , Cheng-Ta Kuo
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L33/00
- IPC分类号： H01L33/00 ; H01L21/00
摘要：
A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
公开/授权文献
- US08076686B2 Light emitting diode and manufacturing method thereof 公开/授权日：2011-12-13
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