In order to provide a reticle capable of increasing the number of chips per wafer and of enabling highly accurate alignment, and an exposure method using the reticle, a first alignment mark arrangement region (8) and a second alignment mark arrangement region (9) are provided on both sides of a multi-chip region (2) so that a sum of a size of the first alignment mark arrangement region and a size of the second alignment mark arrangement region is made the same as a size of a chip region (1).