- 专利标题: Phase change random access memory
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申请号: US12453420申请日: 2009-05-11
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公开(公告)号: US20090225590A1公开(公告)日: 2009-09-10
- 发明人: Hyung-rok Oh , Woo-Yeong Cho , Beak-hyung Cho
- 申请人: Hyung-rok Oh , Woo-Yeong Cho , Beak-hyung Cho
- 优先权: KR10-2006-0085253 20060905
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C7/00
摘要:
Provided is a phase change random access (PRAM) memory. The PRAM may include a memory cell array having a plurality of phase change memory cells, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit configured to provide a sensing node with a compensation current to compensate for a decrease in a level of the sensing node caused by a current flowing through one of the plurality of phase change memory cells, and the sense amplifier configured to compare a level of the sensing node with a reference level and output a result of the comparison.
公开/授权文献
- US07817465B2 Phase change random access memory 公开/授权日:2010-10-19