发明申请
- 专利标题: Method and Apparatus for Manufacturing Semiconductor Wafer
- 专利标题(中): 半导体晶片制造方法和装置
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申请号: US11922997申请日: 2006-06-30
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公开(公告)号: US20090226293A1公开(公告)日: 2009-09-10
- 发明人: Yuichi Nasu , Hirotaka Katou , Kazuhiro Narahara , Hideyuki Matsunaga
- 申请人: Yuichi Nasu , Hirotaka Katou , Kazuhiro Narahara , Hideyuki Matsunaga
- 申请人地址: JP Kanagawa
- 专利权人: SUMCO TECHXIV KABUSHIKI KAISHA
- 当前专利权人: SUMCO TECHXIV KABUSHIKI KAISHA
- 当前专利权人地址: JP Kanagawa
- 优先权: JP2005-197887 20050706
- 国际申请: PCT/JP2006/313082 WO 20060630
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; C23C16/52
摘要:
A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.
公开/授权文献
- US08530801B2 Method and apparatus for manufacturing semiconductor wafer 公开/授权日:2013-09-10