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9 条记录 (耗时 0.015 秒)

    INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM
    1.
    发明申请
    INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM 有权
    信息处理设备，信息处理方法和程序

    公开(公告)号：US20140058703A1

    公开(公告)日：2014-02-27

    申请号：US14111018

    申请日：2012-04-12

    申请人： Masato Kimishima ,  Naoyuki Onoe ,  Tatsuhito Sato ,  Hideyuki Matsunaga

    发明人： Masato Kimishima ,  Naoyuki Onoe ,  Tatsuhito Sato ,  Hideyuki Matsunaga

    IPC分类号： G04F10/00

    CPC分类号： G04F10/00 ,  A61B5/4809 ,  G06F19/00 ,  G06F19/3481 ,  G06Q10/109 ,  G06Q50/22 ,  G09B7/00 ,  G11B27/105 ,  G16H20/30 ,  G16H40/63

    摘要： The present technique relates particularly to an information processing device, an information processing method, and a program which can improve sleep efficiency. The information processing device according to one aspect of the present technique has: an acquisition unit which acquires information which indicates an action schedule of a user; and a first determination unit which determines whether the user needs to wake up or sleep, and determines the degree of necessity of waking up when determining that the user needs to wake up and the degree of necessity of sleeping when determining the user needs to sleep, according to the action schedule of the user. The present technique is applicable to a mobile device such as a mobile telephone, a PDA and a digital camera.

    摘要翻译： 本技术特别涉及可以提高睡眠效率的信息处理装置，信息处理方法和程序。 根据本技术的一个方面的信息处理装置具有：获取单元，其获取表示用户的动作表的信息; 以及第一确定单元，其确定用户是否需要醒来或睡眠，并且当确定用户需要唤醒时确定醒来的必要性程度以及在确定用户需要睡眠时睡眠的程度， 根据用户的动作时间表。 本技术适用于移动电话，PDA，数码相机等移动装置。

    Method and Apparatus for Manufacturing Semiconductor Wafer
    2.
    发明申请
    Method and Apparatus for Manufacturing Semiconductor Wafer 有权
    半导体晶片制造方法和装置

    公开(公告)号：US20090226293A1

    公开(公告)日：2009-09-10

    申请号：US11922997

    申请日：2006-06-30

    申请人： Yuichi Nasu ,  Hirotaka Katou ,  Kazuhiro Narahara ,  Hideyuki Matsunaga

    发明人： Yuichi Nasu ,  Hirotaka Katou ,  Kazuhiro Narahara ,  Hideyuki Matsunaga

    IPC分类号： H01L21/02 ,  C23C16/52

    CPC分类号： H01L21/67115 ,  C23C16/24 ,  C23C16/52 ,  C30B25/105 ,  C30B29/06 ,  C30B35/005 ,  H01L21/67288 ,  H01L21/68742

    摘要： A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.

    摘要翻译： 提供一种用于制造半导体晶片的方法和装置，用于提高半导体晶片的质量，此外，为了通过防止在半导体晶片的阶段产生翘曲来提高通过使用半导体晶片制造的半导体器件的质量 在对半导体晶片基板进行热处理时的放置工序。 通过放置装置进行放置处理，使得当晶片前表面温度和晶片背面温度之间的温度差变为最大时，以及在晶片中产生翘曲的时间在晶片的时间之前 与提升销或感受器接触（即，在温度处于600℃的红外温度区域的上限值之后的时间），并且提升销与晶片后表面接触。

    Recording apparatus
    4.
    发明授权
    Recording apparatus 失效
    记录装置

    公开(公告)号：US06014159A

    公开(公告)日：2000-01-11

    申请号：US987133

    申请日：1997-12-08

    申请人： Koshiro Yamaguchi ,  Naruhito Muto ,  Hideyuki Matsunaga

    发明人： Koshiro Yamaguchi ,  Naruhito Muto ,  Hideyuki Matsunaga

    IPC分类号： B41J29/46 ,  B41J3/407 ,  B41J15/22 ,  B41J21/00 ,  G06F3/12 ,  B41J2/32

    CPC分类号： B41J15/22 ,  B41J3/4075

    摘要： The tape printing apparatus 1 can perform recording on the large-width or small-width recording medium D2 or D1, furthermore, on the test recording medium D3 in accordance with the recording data. The control unit CP converts the data for the large-width recording medium to the test recording data able to be recorded on the test recording medium D3, and performs recording on the test recording medium D3 in accordance with the test recording data.

    摘要翻译： 带式打印设备1可以根据记录数据在大宽度或小宽度记录介质D2或D1上进行记录，此外在测试记录介质D3上进行记录。 控制单元CP将大宽度记录介质的数据转换成能够记录在测试记录介质D3上的测试记录数据，并根据测试记录数据在测试记录介质D3上执行记录。

    Method for the recovery of gold value
    5.
    发明授权
    Method for the recovery of gold value 失效
    金价回收方法

    公开(公告)号：US5429660A

    公开(公告)日：1995-07-04

    申请号：US307062

    申请日：1994-09-16

    申请人： Hideyuki Matsunaga

    发明人： Hideyuki Matsunaga

    IPC分类号： C22B3/42

    CPC分类号： C22B11/04 ,  C22B3/24 ,  C22B3/42 ,  Y02P10/234

    摘要： An efficient method is proposed for the recovery of gold value contained in an aqueous solution even in a very low concentration of the ppb level. Namely, an aqueous acidic solution containing gold value in the form of complex gold anions, e.g., chloro complex anions of gold, is contacted with a solid ion exchanger which is prepared by the adsorption of a 2-hydroxyethyl tri(C.sub.8-12)alkyl ammonium halide on porous resin beads of a polymer of methacrylic acid ester so that the complex gold anions are adsorbed by the ion exchange reaction to form ion pairs with the quaternary ammonium cations. The thus adsorbed complex gold anions coupled with the quaternary ammonium cations can be eluted out of the adsorbent with an organic solvent such as alcohols and ketones in a quantitative yield of recovery.

    摘要翻译： 提出了一种有效的方法，即使在非常低浓度的ppb水平下，也能够回收水溶液中所含的金值。 即，将金属阴离子形式的金价例如金配阴离子金的酸性水溶液与固体离子交换剂接触，所述固体离子交换剂是通过吸附2-羟乙基三（C 8-12）烷基 卤化铵在甲基丙烯酸酯的聚合物的多孔树脂珠上，使得复合金阴离子被离子交换反应吸附以形成与季铵阳离子的离子对。 如此吸附的复合金阴离子与季铵阳离子结合可以用有机溶剂如醇和酮以定量的​​回收率从吸附剂中洗出。

    Method and apparatus for manufacturing semiconductor wafer
    8.
    发明授权
    Method and apparatus for manufacturing semiconductor wafer 有权
    用于制造半导体晶片的方法和装置

    公开(公告)号：US08530801B2

    公开(公告)日：2013-09-10

    申请号：US11922997

    申请日：2006-06-30

    申请人： Yuichi Nasu ,  Hirotaka Katou ,  Kazuhiro Narahara ,  Hideyuki Matsunaga

    发明人： Yuichi Nasu ,  Hirotaka Katou ,  Kazuhiro Narahara ,  Hideyuki Matsunaga

    IPC分类号： H05B3/06

    CPC分类号： H01L21/67115 ,  C23C16/24 ,  C23C16/52 ,  C30B25/105 ,  C30B29/06 ,  C30B35/005 ,  H01L21/67288 ,  H01L21/68742

    摘要： A method and an apparatus for manufacturing a semiconductor wafer are provided for improving a quality of the semiconductor wafer, and further, for improving a quality of a semiconductor device manufactured by using the semiconductor wafer, by preventing warping from being generated at a stage of a placing step, at the time of performing heat treatment to a semiconductor wafer substrate. The placing process is performed by a placing means so that a time when a temperature difference between a wafer front surface temperature and a wafer rear surface temperature becomes maximum, and a time when warping is generated in the wafer are prior to a time when the wafer is brought into contact with lift pins or a susceptor (i.e., a time after the temperature is at an upper limit value of an infrared temperature region at 600° C.), and the lift pins are brought into contact with the wafer rear surface.

    摘要翻译： 提供一种用于制造半导体晶片的方法和装置，用于提高半导体晶片的质量，此外，为了通过防止在半导体晶片的阶段产生翘曲来提高通过使用半导体晶片制造的半导体器件的质量 在对半导体晶片基板进行热处理时的放置工序。 通过放置装置进行放置处理，使得当晶片前表面温度和晶片背面温度之间的温度差变为最大时，以及在晶片中产生翘曲的时间在晶片的时间之前 与提升销或感受器接触（即，在温度处于600℃的红外温度区域的上限值之后的时间），并且提升销与晶片后表面接触。