发明申请
US20090227096A1 Method Of Forming A Retrograde Material Profile Using Ion Implantation
审中-公开
使用离子植入形成逆行材料轮廓的方法
- 专利标题： Method Of Forming A Retrograde Material Profile Using Ion Implantation
- 专利标题（中）： 使用离子植入形成逆行材料轮廓的方法
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申请号： US12044619申请日： 2008-03-07
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公开(公告)号： US20090227096A1公开(公告)日： 2009-09-10
- 发明人: Ludovic Godet , George D. Papasouliotis
- 申请人： Ludovic Godet , George D. Papasouliotis
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/265
- IPC分类号： H01L21/265
摘要：
A method of forming a retrograde material profile in a substrate includes forming a surface peak profile on the substrate. Ions are then implanted into the substrate to form a retrograde profile from the surface peak profile, at least one of an ion implantation dose and an ion implantation energy of the implanted ions being chosen so that the retrograde profile has a peak concentration that is positioned at a desired distance from the surface of the substrate.
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