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公开(公告)号：US11691184B2
公开(公告)日：2023-07-04
申请号：US17007044
申请日：2020-08-31
CPC分类号： B08B1/005 , A47L13/16 , A47L13/46 , B08B1/00 , H01J37/3171 , B08B1/04 , B08B5/04 , H01J2237/022
摘要： A cleaning tool for cleaning a glass surface of an accelerator column is disclosed. The cleaning tool includes a shaft including a first end and a second end; a foam body located at the first end of the shaft; and a mounting bracket coupled to the first end of the shaft, the mounting bracket receiving the foam body. An outer circumference of the foam body includes a textured cleaning surface for contacting the glass surface of the accelerator column.
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公开(公告)号：US11495434B2
公开(公告)日：2022-11-08
申请号：US17034013
申请日：2020-09-28
发明人： Kevin Anglin , William Davis Lee , Peter Kurunczi , Ryan Downey , Jay T. Scheuer , Alexandre Likhanskii , William M. Holber
摘要： Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.
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公开(公告)号：US11488823B2
公开(公告)日：2022-11-01
申请号：US17170351
申请日：2021-02-08
发明人： Simon Ruffell , John Hautala , Adam Brand , Huixiong Dai
IPC分类号： H01L21/02 , H01L21/027 , H01L21/308 , H01L21/033 , H01L21/768
摘要： A method of patterning a substrate. The method may include providing a surface feature on the substrate, the surface feature having a first dimension along a first direction within a substrate plane, and a second dimension along a second direction within the substrate plane, wherein the second direction is perpendicular to the first direction; and directing first ions in a first exposure to the surface feature along the first direction at a non-zero angle of incidence with respect to a perpendicular to the substrate plane, in a presence of a reactive ambient containing a reactive species; wherein the first exposure etches the surface feature along the first direction, wherein after the directing, the surface feature retains the second dimension along the second direction, and wherein the surface feature has a third dimension along the first direction different than the first dimension.
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公开(公告)号：US11424112B2
公开(公告)日：2022-08-23
申请号：US15803259
申请日：2017-11-03
摘要： Embodiments herein include a transparent halo assembly for reducing an amount of sputtered material to minimize particle defects impacting a workpiece. In some embodiments, a halo assembly may include a first halo arranged around a semiconductor workpiece, and a mounting assembly coupling the first halo to a roplat. The first halo may include a first side opposite a second side, and a first end opposite a second end, wherein the first side is operable to receive an ion beam from an ion source. The first halo may further include a plurality of apertures extending between the first and second sides, wherein the plurality of apertures permit passage of a portion of the ion beam to pass therethrough, towards the mounting assembly. In some embodiments, the halo assembly may include a second halo positioned proximate the first halo, and a third halo disposed between the first halo and the mounting assembly.
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公开(公告)号：US20210375626A1
公开(公告)日：2021-12-02
申请号：US17404438
申请日：2021-08-17
发明人： Kevin R. Anglin , Simon Ruffell
IPC分类号： H01L21/033 , H01L21/67 , H01J37/32 , H01L21/311
摘要： A method of patterning a substrate may include providing a cavity in a layer, disposed on the substrate. The cavity may have a first length along a first direction and a first width along a second direction, perpendicular to the first direction. The method may include directing first angled ions in a first exposure to the cavity, wherein after the first exposure the cavity has a second length, greater than the first length; directing normal ions in a second exposure to the cavity, wherein the cavity retains the second length after the second exposure; and directing second angled ions to the cavity is a third exposure, subsequent to the second exposure, wherein the cavity has a third length, greater than the second length, after the third exposure.
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公开(公告)号：US11145496B2
公开(公告)日：2021-10-12
申请号：US15991328
申请日：2018-05-29
IPC分类号： H01J37/32 , H01J37/08 , H01J37/147 , E05C5/04
摘要： A fastening system for attaching two components with a spring force is disclosed. The fastening system utilizes O-rings to provide the spring force, eliminating the need for any metal components. The O-ring may be disposed in an O-ring holder that has a plurality of spokes. When compressed, indentations are created in the O-ring by the spokes. The number of spokes and their size and shape determine the spring force of the fastening system. In another embodiment, vertically oriented O-rings are utilized. The fastening system may be used to fasten various components of an ion source.
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公开(公告)号：US11114277B2
公开(公告)日：2021-09-07
申请号：US16891256
申请日：2020-06-03
发明人： Bon-Woong Koo , Jun Lu , Frank Sinclair , Eric D. Hermanson , Joseph E. Pierro , Michael D. Johnson , Michael S. DeLucia , Antonella Cucchetti
IPC分类号： H01J37/317 , H01J27/08 , H01J1/50 , H01J37/08
摘要： An ion source having dual indirectly heated cathodes is disclosed. Each of the cathodes may be independently biased relative to its respective filament so as to vary the profile of the beam current that is extracted from the ion source. In certain embodiments, the ion source is used in conjunction with an ion implanter. The ion implanter comprises a beam profiler to measure the current of the ribbon ion beam as a function of beam position. A controller uses this information to independently control the bias voltages of the two indirectly heated cathodes so as to vary the uniformity of the ribbon ion beam. In certain embodiments, the current passing through each filament may also be independently controlled by the controller.
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公开(公告)号：US11101183B2
公开(公告)日：2021-08-24
申请号：US16037915
申请日：2018-07-17
发明人： Min Gyu Sung , Sony Varghese
IPC分类号： H01L21/8238 , H01L29/78 , H01L27/092 , H01L29/66
摘要： Disclosed are methods of forming a CMOS device. One non-limiting method may include providing a gate structure atop a substrate, and forming a first spacer over the gate structure. The method may include removing the first spacer from just an upper portion of the gate structure by performing an angled reactive ion etch or angled implantation disposed at a non-zero angle of inclination with respect to a perpendicular to a plane of the substrate. The method may further include forming a second spacer over the upper portion of the gate structure and the first spacer along a lower portion of the gate structure. A thickness of the first spacer and the second spacer along the lower portion of the gate structure may be greater than a thickness of the second spacer along the upper portion of the gate structure.
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公开(公告)号：US11031774B2
公开(公告)日：2021-06-08
申请号：US16245993
申请日：2019-01-11
发明人： Scott W. Nickerson , Paul Murphy , Saeed Jazebi
摘要： A superconducting fault current limiter element, comprising: a plurality of tapes, arranged in electrical parallel fashion among one another, wherein at least one tape of the plurality of tapes comprises a superconductor tape, and wherein at least one tape of the plurality of tapes comprises a non-superconductor tape.
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公开(公告)号：US10990014B2
公开(公告)日：2021-04-27
申请号：US16691739
申请日：2019-11-22
发明人： Tristan Y. Ma , Huixiong Dai , Anthony Renau , John Hautala , Joseph Olson
摘要： A method of patterning a substrate may include providing a blanket photoresist layer on the substrate; performing an ion implantation procedure of an implant species into the blanket photoresist layer, the implant species comprising an enhanced absorption efficiency at a wavelength in the extreme ultraviolet (EUV) range; and subsequent to the performing the ion implantation procedure, performing a patterned exposure to expose the blanket photoresist layer to EUV radiation.
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