发明申请
- 专利标题： METHOD FOR REMOVING A PORE-GENERATING MATERIAL FROM AN UNCURED LOW-K DIELECTRIC FILM
- 专利标题（中）： 从固化的低K电介质膜中去除生成材料的方法
-
申请号： US12043814申请日： 2008-03-06
-
公开(公告)号： US20090227118A1公开(公告)日： 2009-09-10
- 发明人: Junjun Liu , Dorel I. Toma , Eric M. Lee
- 申请人： Junjun Liu , Dorel I. Toma , Eric M. Lee
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/469
- IPC分类号： H01L21/469
摘要：
A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjusting a residual amount of cross-linking inhibitor, such as pore-generating material, within the low-k dielectric film.
公开/授权文献
信息查询
IPC分类:
