发明申请
- 专利标题: PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE
- 专利标题(中): 相位变化记忆体与调制结构
-
申请号: US12049056申请日: 2008-03-14
-
公开(公告)号: US20090231911A1公开(公告)日: 2009-09-17
- 发明人: Jun Liu , Michael P. Violette
- 申请人: Jun Liu , Michael P. Violette
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; H01L47/00 ; H01L21/00
摘要:
Some embodiments include apparatus and methods having a memory cell with a first electrode and a second electrode, and a memory element directly contacting the first and second electrodes. The memory element may include a programmable portion having a material configured to change between multiple phases. The programmable portion may be isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element.
公开/授权文献
- US07852658B2 Phase change memory cell with constriction structure 公开/授权日:2010-12-14
信息查询