发明申请
US20090231911A1 PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE 有权
相位变化记忆体与调制结构

PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE
摘要:
Some embodiments include apparatus and methods having a memory cell with a first electrode and a second electrode, and a memory element directly contacting the first and second electrodes. The memory element may include a programmable portion having a material configured to change between multiple phases. The programmable portion may be isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element.
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