A memory with a write port configured for double-pump writes. The memory includes a first and second memory locations each having one or more bit cells, and one or more bit lines each coupled to corresponding ones of the bit cells. A write port is coupled to each of the bit lines. Selection circuitry, responsive to a first clock edge, latches first data from a first data path through the write port, and responsive to a second clock edge, latches second data from a second data path through the write port. A first pulse is generated during a first phase of the clock signal to cause writing of the first data into the first memory location. A second pulse is generated during a second phase of the clock signal to cause writing of the second data into the second memory location.