发明申请
- 专利标题： Semiconductor device having silicon layer in a gate electrode
- 专利标题（中）： 在栅电极中具有硅层的半导体器件
-
申请号： US12453737申请日： 2009-05-20
-
公开(公告)号： US20090233433A1公开(公告)日： 2009-09-17
- 发明人: Satoru Yamada , Ryo Nagai
- 申请人： Satoru Yamada , Ryo Nagai
- 申请人地址： JP Tokyo
- 专利权人： ELPIDA MEMORY, INC.
- 当前专利权人： ELPIDA MEMORY, INC.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2004-363999 20041216
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique.
公开/授权文献
信息查询
IPC分类:
