Invention Application
US20090237770A1 OPTICAL DEVICE INCLUDING GATE INSULATOR WITH MODULATED THICKNESS
有权
光学装置,包括具有调制厚度的门绝缘体
- Patent Title: OPTICAL DEVICE INCLUDING GATE INSULATOR WITH MODULATED THICKNESS
- Patent Title (中): 光学装置,包括具有调制厚度的门绝缘体
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Application No.: US12375343Application Date: 2007-04-24
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Publication No.: US20090237770A1Publication Date: 2009-09-24
- Inventor: Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
- Applicant: Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Gyungock Kim
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Priority: KR10-2006-0071656 20060728
- International Application: PCT/KR07/02003 WO 20070424
- Main IPC: G02F1/015
- IPC: G02F1/015 ; H01L29/78 ; H01L33/00

Abstract:
Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.
Public/Granted literature
- US07994549B2 Optical device including gate insulator with modulated thickness Public/Granted day:2011-08-09
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