公开(公告)号：US20090207472A1

公开(公告)日：2009-08-20

申请号：US12374261

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

IPC: G02F1/015 ,  H01L29/786

CPC classification number: G02F1/025 ,  G02F2203/50 ,  G11C13/04

Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.

Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。

公开(公告)号：US20090237770A1

公开(公告)日：2009-09-24

申请号：US12375343

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

IPC: G02F1/015 ,  H01L29/78 ,  H01L33/00

CPC classification number: G02F1/025 ,  G02F1/225 ,  G02F1/3132 ,  H01L31/105

Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a ? shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Abstract translation: 提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅绝缘层， 形成在第一半导体层的一部分上，并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

公开(公告)号：US08346026B2

公开(公告)日：2013-01-01

申请号：US12517802

申请日：2007-08-07

Applicant: Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

Inventor： Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

IPC: G02F1/035 ,  G02B6/12 ,  G02B6/00

CPC classification number: H01L31/12 ,  H01L27/144

Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.

Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。 光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。

公开(公告)号：US07928442B2

公开(公告)日：2011-04-19

申请号：US12441381

申请日：2007-08-17

Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

IPC: H01L31/036

CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

公开(公告)号：US07924492B2

公开(公告)日：2011-04-12

申请号：US12374261

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

IPC: G02F1/07

CPC classification number: G02F1/025 ,  G02F2203/50 ,  G11C13/04

Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.

Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。

公开(公告)号：US07994549B2

公开(公告)日：2011-08-09

申请号：US12375343

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Gyungock Kim

IPC: H01L29/76

CPC classification number: G02F1/025 ,  G02F1/225 ,  G02F1/3132 ,  H01L31/105

Abstract: Provided is an optical device with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities and has a uniform thickness; a gate insulating layer which has a shape and is formed on a portion of the first semiconductor layer and has a thin center portion; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive type impurities.

Abstract translation: 提供了一种具有改善的相移和光传播损耗的光学器件，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质并具有均匀厚度的第一半导体层; 栅极绝缘层，其具有形状并且形成在所述第一半导体层的一部分上并且具有薄的中心部分; 以及第二半导体层，其覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电类型杂质相反的第二类型的导电杂质。

公开(公告)号：US20100002978A1

公开(公告)日：2010-01-07

申请号：US12517802

申请日：2007-08-07

Applicant: Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

Inventor： Jeong-Woo Park ,  Gyungock Kim ,  Young-Ahn Leem ,  Hyun-Soo Kim ,  Bongki Mheen

IPC: G02F1/035 ,  G02B6/12

CPC classification number: H01L31/12 ,  H01L27/144

Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.

Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。 光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。

公开(公告)号：US20090261383A1

公开(公告)日：2009-10-22

申请号：US12441381

申请日：2007-08-17

Applicant: Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

Inventor： Bongki Mheen ,  Jeong-Woo Park ,  Hyun-Soo Kim ,  Gyungock Kim

IPC: H01L29/80

CPC classification number: G02F1/025 ,  G02F1/2257 ,  H01L33/0037

Abstract: Provided is an optical device having a strained buried channel area. The optical device includes: a semiconductor substrate of a first conductive type; a gate insulating layer formed on the semiconductor substrate; a gate of a second conductive type opposite to the first conductive type, formed on the gate insulating layer; a high density dopant diffusion area formed in the semiconductor substrate under the gate and doped with a first conductive type dopant having a higher density than the semiconductor substrate; a strained buried channel area formed of a semiconductor material having a different lattice parameter from a material of which the semiconductor substrate is formed and extending between the gate insulating layer and the semiconductor substrate to contact the high density dopant diffusion area; and a semiconductor cap layer formed between the gate insulating layer and the strained buried channel area.

Abstract translation: 提供了具有应变埋入通道区域的光学装置。 该光学器件包括：第一导电类型的半导体衬底; 形成在半导体衬底上的栅极绝缘层; 形成在栅极绝缘层上的与第一导电类型相反的第二导电类型的栅极; 形成在所述半导体衬底下的高密度掺杂剂扩散区，并且掺杂有比所述半导体衬底更高密度的第一导电型掺杂剂; 由半导体材料形成的应变掩埋沟道区域，具有与形成半导体衬底的材料不同的晶格参数，并且在栅极绝缘层和半导体衬底之间延伸以接触高密度掺杂剂扩散区域; 以及形成在栅绝缘层和应变埋入沟道区之间的半导体盖层。

公开(公告)号：US08849662B2

公开(公告)日：2014-09-30

申请号：US11646911

申请日：2006-12-28

Applicant: Hyun-Soo Kim

Inventor： Hyun-Soo Kim

IPC: G10L15/02 ,  G10L15/00 ,  G10L15/06 ,  G10L17/00 ,  G10L15/04

CPC classification number: G10L15/04 ,  G10L2015/025

Abstract: A method and a system for segmenting phonemes from voice signals. A method for accurately segmenting phonemes, in which a histogram showing a peak distribution corresponding to an order is formed by using a high order concept, and a boundary indicating a starting point and an ending point of each phoneme is determined by calculating a peak statistic based on the histogram. The phoneme segmentation method can remarkably reduce an amount of calculation, and has an advantage of being applied to sound signal systems which perform sound coding, sound recognition, sound synthesizing, sound reinforcement, etc.

Abstract translation: 一种从语音信号中分割音素的方法和系统。 一种用于准确分割音素的方法，其中通过使用高阶概念形成表示与顺序相对应的峰值分布的直方图，并且通过计算基于峰值统计量来确定表示每个音素的起点和终点的边界 在直方图上。 音素分割方法可以显着减少计算量，并且具有应用于执行声音编码，声音识别，声音合成，扩音等的声音信号系统的优点。

公开(公告)号：US08577677B2

公开(公告)日：2013-11-05

申请号：US12460473

申请日：2009-07-20

Applicant: Hyun-Soo Kim ,  Hanseok Ko ,  Jounghoon Beh ,  Taekjin Lee

Inventor： Hyun-Soo Kim ,  Hanseok Ko ,  Jounghoon Beh ,  Taekjin Lee

IPC: G10L21/02

CPC classification number: G10L21/0272 ,  G10L2021/02166

Abstract: A system and method for sound source separation. The system and method use a beamforming technique. The sound source separation system includes a windowing processor; a DFT transformer; a transfer function estimator; and a noise estimator. The system also includes a voice signal extractor that cancels individual voice signals, except an individual voice signal that is desired to be extracted among individual voice signals, from the integrated voice signals. The system further includes a voice signal detector that cancels a noise part provided through the noise estimator from a transfer function of an individual voice signal which is desired to be detected and extracts a noise-canceled individual voice signal. Even when two or more sound sources are simultaneously input, the sound sources can be separated from each other and separately stored and managed, or an initial sound source can be stored and managed.

Abstract translation: 一种声源分离的系统和方法。 该系统和方法使用波束成形技术。 声源分离系统包括开窗处理器; DFT变压器; 传递函数估计器; 和噪声估计器。 该系统还包括语音信号提取器，除了从各个语音信号中提取的单个语音信号之外，还可以从集成语音信号中消除各个语音信号。 该系统还包括语音信号检测器，该语音信号检测器根据期望被检测的单独语音信号的传递函数来消除通过噪声估计器提供的噪声部分，并提取噪声消除的个体语音信号。 即使当同时输入两个或更多个声源时，声源可以彼此分开并分开存储和管理，或者可以存储和管理初始声源。