A solid electrolyte memory involves a problem that stable rewriting is difficult since the amount of ions in the solid electrolyte and the shape of the electrode are changed by repeating rewriting. In a semiconductor device in which information is stored or the circuit connection is changed by the change of resistance of the solid electrolyte layer, the solid electrolyte layer includes a composition, for example, of Cu—Ta—S and an ion supply layer in adjacent or close therewith as Cu—Ta—O, in which ions supplied from the ion supply layer form a conduction path in the solid electrolyte layer thereby making it possible to store information by the level of the resistance and applying the electric pulse to change the resistance, in which the ion supply layer includes crystals having, for example, a compositional ratio of: Cu—Ta—O=1:2:6 and rewriting operation can be performed stably.