发明申请
- 专利标题: SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF
- 专利标题(中): 半导体发光元件及其生产工艺
-
申请号: US12363198申请日: 2009-01-30
-
公开(公告)号: US20090242925A1公开(公告)日: 2009-10-01
- 发明人: Ryota KITAGAWA , Koji Asakawa , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi
- 申请人: Ryota KITAGAWA , Koji Asakawa , Akira Fujimoto , Tsutomu Nakanishi , Eishi Tsutsumi
- 优先权: JP2008-77421 20080325
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.
公开/授权文献
信息查询
IPC分类: