发明申请
- 专利标题： NITRIDE-BASED SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 基于氮化物的半导体激光器件及其制造方法
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申请号： US12415647申请日： 2009-03-31
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公开(公告)号： US20090245310A1公开(公告)日： 2009-10-01
- 发明人: Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata , Yasumitsu Kuno
- 申请人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata , Yasumitsu Kuno
- 申请人地址： JP Moriguchi-shi
- 专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人： Sanyo Electric Co., Ltd.
- 当前专利权人地址： JP Moriguchi-shi
- 优先权： JP2008-90124 20080331; JP2009-67213 20090319
- 主分类号： H01S5/323
- IPC分类号： H01S5/323 ; H01L21/18 ; H01L21/50
摘要：
A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.
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