发明申请
- 专利标题： Polymer inactivation method for polycrystalline silicon manufacturing device
- 专利标题（中）： 多晶硅制造装置的聚合物灭活方法
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申请号： US12382899申请日： 2009-03-26
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公开(公告)号： US20090246113A1公开(公告)日： 2009-10-01
- 发明人: Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
- 申请人： Toshihide Endoh , Masayuki Tebakari , Toshiyuki Ishii , Masaaki Sakaguchi
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI MATERIALS CORPORATION
- 当前专利权人： MITSUBISHI MATERIALS CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2008-085671 20080328
- 主分类号： C01B33/08
- IPC分类号： C01B33/08
摘要：
A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.
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