发明申请
- 专利标题: Method of producing field effect transistor
- 专利标题(中): 产生场效应晶体管的方法
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申请号: US12382943申请日: 2009-03-26
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公开(公告)号: US20090246924A1公开(公告)日: 2009-10-01
- 发明人: Yuki NIIYAMA , Seikoh Yoshida , Masatoshi Ikeda , Hiroshi Kambayashi , Takehiko Nomura
- 申请人: Yuki NIIYAMA , Seikoh Yoshida , Masatoshi Ikeda , Hiroshi Kambayashi , Takehiko Nomura
- 优先权: JP2008-088603 20080328
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing the field effect transistor. The method of the invention does not apply the heating of the substrate or the sample stage to raise the temperature of the semiconductor layer using the thermal conductivity so as to activate the impurities. Thus, the implanted impurities can be activated without deteriorating the performance of the device and reliability.
公开/授权文献
- US07998848B2 Method of producing field effect transistor 公开/授权日:2011-08-16