公开(公告)号：US09048302B2

公开(公告)日：2015-06-02

申请号：US12318779

申请日：2009-01-08

申请人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

发明人： Yoshihiro Sato ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Takehiko Nomura ,  Seikoh Yoshida ,  Masayuki Iwami ,  Jiang Li

IPC分类号： H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/778 ,  H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/267

CPC分类号： H01L29/7813 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/0843 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/267 ,  H01L29/4232 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/778 ,  H01L29/7783 ,  H01L29/7789

摘要： A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer.

摘要翻译： 场效应晶体管具有MOS结构并且由氮化物基化合物半导体形成。 场效应晶体管包括衬底; 具有凹部并形成在所述基板上的半导体操作层; 形成在包括所述凹部的所述半导体操作层上的绝缘层; 在所述凹部处形成在所述绝缘层上的栅电极; 以及形成在半导体操作层上的源电极和漏电极，其中凹部位于半导体操作层之间并与半导体操作层电连接。 凹部包括相对于半导体操作层倾斜的侧壁。

公开(公告)号：US20130052816A1

公开(公告)日：2013-02-28

申请号：US13582239

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28

CPC分类号： H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。

公开(公告)号：US08093626B2

公开(公告)日：2012-01-10

申请号：US12308401

申请日：2007-06-14

申请人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

发明人： Yuki Niiyama ,  Shinya Ootomo ,  Tatsuyuki Shinagawa ,  Takehiko Nomura ,  Seikoh Yoshida ,  Hiroshi Kambayashi

IPC分类号： H01L29/78 ,  H01L21/66

CPC分类号： H01L29/7802 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/0886 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/42356 ,  H01L29/66606 ,  H01L29/66659 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7835

摘要： Provided is a normally-off field effect transistor using a III-nitride semiconductor. The transistor is provided with a III-nitride semiconductor layer grown on a substrate by including an acceptor and a donor; a gate insulating film which is formed on the III-nitride semiconductor layer to have a thickness to be at a prescribed threshold voltage based on the concentration of the acceptor and that of the donor; a gate electrode formed on the gate insulating film; a first source/drain electrode formed on the III-nitride semiconductor layer to one side of and separate from the gate electrode, directly or via a high dopant concentration region; and a second source/drain electrode formed away from the gate electrode and the first source/drain electrode, on or under the III-nitride semiconductor layer, directly or via a high dopant concentration region.

摘要翻译： 提供了使用III族氮化物半导体的常关场效应晶体管。 晶体管设置有通过包括受体和供体在衬底上生长的III族氮化物半导体层; 基于所述受主的浓度和所述供体的浓度，形成在所述III族氮化物半导体层上的厚度为规定阈值电压的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 在III族氮化物半导体层上直接或经由高掺杂剂浓度区域形成在栅电极的一侧并与栅电极分离的第一源/漏电极; 以及在III族氮化物半导体层上或下方形成为远离栅电极和第一源/漏电极的第二源/漏电极，直接或经由高掺杂剂浓度区域。

公开(公告)号：US08072002B2

公开(公告)日：2011-12-06

申请号：US12382941

申请日：2009-03-26

申请人： Yuki Niyama ,  Seikoh Yoshida ,  Hiroshi Kambayashi ,  Takehiko Nomura ,  Masayuki Iwami ,  Shinya Ootomo

发明人： Yuki Niyama ,  Seikoh Yoshida ,  Hiroshi Kambayashi ,  Takehiko Nomura ,  Masayuki Iwami ,  Shinya Ootomo

IPC分类号： H01L29/66

CPC分类号： H01L29/2003 ,  H01L29/0843 ,  H01L29/42368 ,  H01L29/7786

摘要： A field effect transistor formed of a semiconductor of a III group nitride compound, includes an electron running layer formed on a substrate and formed of GaN; an electron supplying layer formed on the electron running layer and formed of AlxGa1-xN (0.01≦x≦0.4), the electron supplying layer having a band gap energy different from that of the electron running layer and being separated with a recess region having a depth reaching the electron running layer; a source electrode and a drain electrode formed on the electron supplying layer with the recess region in between; a gate insulating film layer formed on the electron supplying layer for covering a surface of the electron running layer in the recess region; and a gate electrode formed on the gate insulating film layer in the recess region. The electron supplying layer has a layer thickness between 5.5 nm and 40 nm.

摘要翻译： 由III族氮化物化合物的半导体形成的场效应晶体管包括形成在衬底上并由GaN形成的电子运行层; 电子供给层，形成在电子运行层上，由Al x Ga 1-x N（0.01＆nlE; x＆nlE; 0.4）形成，电子供给层的带隙能量与电子运行层的能隙不同，并且与具有 达到电子运行层的深度; 形成在电子供给层上的源电极和漏电极，其间具有凹陷区域; 在所述电子供给层上形成的用于覆盖所述凹部的电子运行层的表面的栅极绝缘膜层; 以及形成在所述凹部区域中的所述栅极绝缘膜层上的栅电极。 电子供给层的层厚在5.5nm至40nm之间。

公开(公告)号：US20100117186A1

公开(公告)日：2010-05-13

申请号：US12457904

申请日：2009-06-24

申请人： Hiroshi Kambayashi ,  Shusuke Kaya ,  Nariaki Ikeda

发明人： Hiroshi Kambayashi ,  Shusuke Kaya ,  Nariaki Ikeda

IPC分类号： H01L29/47 ,  H01L21/28 ,  H01L21/82

CPC分类号： H01L29/0657 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/475 ,  H01L29/66462 ,  H01L29/7787

摘要： The invention provides a semiconductor device and a method for fabricating the same capable of preventing a field plate portion from being delaminated from an insulating film by stress inherent in a semiconductor layer even if the stress is released in forming a trench in part of the semiconductor layer where the semiconductor device is to be separated and capable of having a higher breakdown property of the semiconductor device. The semiconductor device has source, drain and gate electrodes, insulating films that insulate the electrodes on an electron supplying layer and a mesa-structure formed at part where the semiconductor device is to be separated. The gate electrode has a first electrode layer having a function of the electrode and a second electrode layer having a field plate portion whose part that contacts with the insulating film is made of a metallic material that adheres well to the insulating film.

摘要翻译： 本发明提供一种半导体器件及其制造方法，其能够通过半导体层中固有的应力防止场板部分与绝缘膜分层，即使在半导体层的一部分中形成沟槽时释放应力 其中半导体器件将被分离并且能够具有较高的半导体器件的击穿特性。 半导体器件具有源极，漏极和栅极电极，使电极在电子供给层上绝缘的绝缘膜和在半导体器件将被分离的部分处形成的台面结构。 栅电极具有具有电极功能的第一电极层和具有场板部分的第二电极层，其与绝缘膜接触的部分由与绝缘膜良好结合的金属材料制成。

公开(公告)号：US20090250767A1

公开(公告)日：2009-10-08

申请号：US12325784

申请日：2008-12-01

申请人： Takehiko Nomura ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Seikoh Yoshida

发明人： Takehiko Nomura ,  Hiroshi Kambayashi ,  Yuki Niiyama ,  Seikoh Yoshida

IPC分类号： H01L27/088

CPC分类号： H01L29/7787 ,  H01L21/8252 ,  H01L21/8258 ,  H01L21/86 ,  H01L27/0605 ,  H01L29/2003 ,  H03K3/0315

摘要： A second semiconductor layer of a second nitride-based compound semiconductor with a wider bandgap formed on a first semiconductor layer of a first nitride-based compound semiconductor with a smaller bandgap includes an opening, on which a gate insulating layer is formed at a portion exposed through the opening. A first source electrode and a first drain electrode formed across a first gate electrode make an ohmic contact to the second semiconductor layer. A second source electrode and a second drain electrode formed across a second gate electrode that makes a Schottky contact to the second semiconductor layer make an ohmic contact to the second semiconductor layer.

摘要翻译： 在具有较小带隙的第一氮化物基化合物半导体的第一半导体层上形成的具有较宽带隙的第二氮化物基化合物半导体的第二半导体层包括开口，在其上形成栅绝缘层 通过开放。 在第一栅极电极上形成的第一源电极和第一漏电极与第二半导体层形成欧姆接触。 形成在与第二半导体层形成肖特基接触的第二栅电极上的第二源极和第二漏极与第二半导体层形成欧姆接触。

公开(公告)号：US20090246924A1

公开(公告)日：2009-10-01

申请号：US12382943

申请日：2009-03-26

申请人： Yuki NIIYAMA ,  Seikoh Yoshida ,  Masatoshi Ikeda ,  Hiroshi Kambayashi ,  Takehiko Nomura

发明人： Yuki NIIYAMA ,  Seikoh Yoshida ,  Masatoshi Ikeda ,  Hiroshi Kambayashi ,  Takehiko Nomura

IPC分类号： H01L21/336

CPC分类号： H01L29/7834 ,  H01L21/26553 ,  H01L21/268 ,  H01L29/2003 ,  H01L29/66522 ,  H01L29/7835

摘要： The laser beam with a wavelength having a higher energy than the band gap energy of the material forming the carrier moving layer is irradiated to activate the impurities contained in the constituent layer of the field effect transistor in the method of producing the field effect transistor. The method of the invention does not apply the heating of the substrate or the sample stage to raise the temperature of the semiconductor layer using the thermal conductivity so as to activate the impurities. Thus, the implanted impurities can be activated without deteriorating the performance of the device and reliability.

摘要翻译： 在产生场效应晶体管的方法中，照射具有比形成载流子移动层的材料的能隙高的波长的激光束激发包含在场效应晶体管的构成层中的杂质。 本发明的方法不适用基板或样品台的加热，以提高使用导热率的半导体层的温度以激活杂质。 因此，可以在不降低器件性能和可靠性的情况下激活注入的杂质。

公开(公告)号：US20090105061A1

公开(公告)日：2009-04-23

申请号：US12226794

申请日：2007-04-27

申请人： Kosuke Fujiwara ,  Akihiro Koyama ,  Hiroshi Kambayashi

发明人： Kosuke Fujiwara ,  Akihiro Koyama ,  Hiroshi Kambayashi

IPC分类号： C03C3/064 ,  C03C3/066 ,  C03C3/068 ,  G02F1/01

CPC分类号： C03C3/066 ,  C03C3/068 ,  C03C8/02 ,  C03C8/04 ,  C03C8/24 ,  H01J29/864 ,  H01J31/123 ,  H01J2329/864

摘要： The present invention provides a glass composition that has good formability and tends not to cause electric-field breakdown when formed into a spacer for an electron beam-excited display. The present invention relates to a glass composition that contains the following components, in terms of mass %: 20≦SiO2

摘要翻译： 本发明提供一种玻璃组合物，其具有良好的成形性，并且当形成用于电子束激发显示器的间隔物时，不会引起电场击穿。 本发明涉及以质量％计含有以下组分的玻璃组合物：20≤SiO2 <40,6