发明申请
- 专利标题： IN-SITU HYBRID DEPOSITION OF HIGH DIELECTRIC CONSTANT FILMS USING ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION
- 专利标题（中）： 使用原子层沉积和化学气相沉积的高介电常数膜的现场混合沉积
-
申请号： US12058470申请日： 2008-03-28
-
公开(公告)号： US20090246971A1公开(公告)日： 2009-10-01
- 发明人: Kimberly G. Reid , Anthony Dip
- 申请人： Kimberly G. Reid , Anthony Dip
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 主分类号： H01L21/31
- IPC分类号： H01L21/31
摘要：
An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atomic layer deposition (ALD) a first portion of a high-k dielectric film on the plurality of substrates, after depositing the first portion, and without removing the plurality of substrates from the process chamber, depositing by chemical vapor deposition (CVD) a second portion of the high-k dielectric film on the first portion, and removing the plurality of substrates from the process chamber. The method can further include alternatingly repeating the deposition of the first and second portions until the high-k dielectric film has a desired thickness. The method can still further include pre-treating the substrates and post-treating the high-k dielectric film in-situ prior to the removing.