发明申请
- 专利标题： Switching Element
- 专利标题（中）： 开关元件
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申请号： US11992883申请日： 2006-09-25
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公开(公告)号： US20090251199A1公开(公告)日： 2009-10-08
- 发明人: Yasuhisa Naitoh , Masayo Horikawa , Hidekazu Abe , Tetsuo Shimizu , Wataru Mizutani , Shigeo Furuta , Masatoshi Ono , Tsuyoshi Takahashi
- 申请人： Yasuhisa Naitoh , Masayo Horikawa , Hidekazu Abe , Tetsuo Shimizu , Wataru Mizutani , Shigeo Furuta , Masatoshi Ono , Tsuyoshi Takahashi
- 申请人地址： JP TOKYO JP Osaka
- 专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,FUNAI ELECTRIC ADVANCED APPLIED TECHNOLOGY RESEARCH INSTITUTE INC.
- 当前专利权人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,FUNAI ELECTRIC ADVANCED APPLIED TECHNOLOGY RESEARCH INSTITUTE INC.
- 当前专利权人地址： JP TOKYO JP Osaka
- 优先权： JP2005-280633 20050927; JP2006-189380 20060710
- 国际申请： PCT/JP2006/318993 WO 20060925
- 主分类号： H03K17/00
- IPC分类号： H03K17/00
摘要：
A switching element 100 includes an insulating substrate 10, a first electrode 20 provided on the insulating substrate 10, a second electrode 30 provided on the insulating substrate 10, and an interelectrode gap 40 provided between the first electrode 20 and the second electrode 30, a distance G between the first electrode 20 and the second electrode 30 being 0 nm
公开/授权文献
- US08093518B2 Switching element relying on nanogap electrodes 公开/授权日：2012-01-10
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