公开(公告)号：US09135990B2

公开(公告)日：2015-09-15

申请号：US13819217

申请日：2011-08-25

申请人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

发明人： Tsuyoshi Takahashi ,  Yuichiro Masuda ,  Shigeo Furuta ,  Touru Sumiya ,  Masatoshi Ono ,  Yutaka Hayashi ,  Toshimi Fukuoka ,  Tetsuo Shimizu ,  Kumaragurubaran Somu ,  Hiroshi Suga ,  Yasuhisa Naitou

IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C17/16

CPC分类号： G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/52 ,  G11C2213/74 ,  G11C2213/79

摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.

摘要翻译： 存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。 从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲 通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。 当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

公开(公告)号：US08653912B2

公开(公告)日：2014-02-18

申请号：US12997316

申请日：2008-06-13

申请人： Shigeo Furuta ,  Tsuyoshi Takahashi ,  Masatoshi Ono ,  Yasuhisa Naitoh ,  Tetsuo Shimizu

发明人： Shigeo Furuta ,  Tsuyoshi Takahashi ,  Masatoshi Ono ,  Yasuhisa Naitoh ,  Tetsuo Shimizu

IPC分类号： H01H51/22 ,  H01H57/00

CPC分类号： H01L45/1233 ,  H01L45/04 ,  H01L45/12 ,  H01L45/124

摘要： There is provided a switching element which facilitates integration with higher density and lamination in a device, the switching element including: an insulating substrate; a first electrode provided on the insulating substrate; a second electrode provided above the first electrode; and a between-electrode gap section provided between the first electrode and the second electrode and including a nanometer-scale gap for causing a switching phenomenon of a resistor by applying a prescribed voltage between the first electrode and the second electrode.

摘要翻译： 提供了一种开关元件，其有助于在器件中更高密度和层叠的集成，所述开关元件包括：绝缘基板; 设置在所述绝缘基板上的第一电极; 设置在所述第一电极上方的第二电极; 以及设置在第一电极和第二电极之间的电极间间隙，并且包括通过在第一电极和第二电极之间施加规定电压而引起电阻器的开关现象的纳米级间隙。

公开(公告)号：US08557448B2

公开(公告)日：2013-10-15

申请号：US11667876

申请日：2006-01-12

申请人： Yoshinori Yamamoto ,  Yuichi Yagami ,  Jiro Aizaki ,  Junichi Shirahama ,  Sogo Goto ,  Tsuyoshi Takahashi ,  Tomokazu Hayashi

发明人： Yoshinori Yamamoto ,  Yuichi Yagami ,  Jiro Aizaki ,  Junichi Shirahama ,  Sogo Goto ,  Tsuyoshi Takahashi ,  Tomokazu Hayashi

IPC分类号： H01M8/00 ,  H01M8/04 ,  H01M8/06 ,  H01M2/40

CPC分类号： H01M8/0265 ,  H01M8/0206 ,  H01M8/0228 ,  H01M8/0247 ,  H01M8/0254 ,  H01M8/0258 ,  H01M8/0267 ,  H01M8/04029 ,  H01M8/241 ,  H01M8/2457 ,  H01M8/2483

摘要： The fuel cell of the invention includes an electrolyte assembly, and a separator having one face as a gas flow path-forming face with a gas flow path formed thereon to allow flow of a reactive gas and the other face, which is reverse to the one face, as a refrigerant flow path-forming face with a refrigerant flow path formed thereon to allow flow of a refrigerant. The gas flow path-forming face of the separator has multiple linear gas flow paths that are arranged in parallel to one another, and a gas flow path connection structure that divides the multiple linear gas flow paths into plural linear gas flow path groups and connects at least part of the plural linear gas flow path groups in series. The refrigerant flow path-forming face has multiple linear refrigerant flow paths that are formed as a reverse structure of the multiple linear gas flow paths on the gas flow path-forming face, and a refrigerant flow path connection structure that is formed as a reverse structure of the gas flow path connection structure on the gas flow path-forming face to connect the multiple linear refrigerant flow paths in parallel.

摘要翻译： 本发明的燃料电池包括一个电解液组件和一个隔板，一个表面作为一个气流通道形成面，在其上形成一个气流通道，以允许一个反应气体和另一个面相反流动 作为制冷剂流路形成面，其上形成有制冷剂流路，以允许制冷剂流动。 分离器的气体流路形成面具有彼此平行布置的多个线性气体流动路径，以及气体流路连接结构，其将多个线性气体流动路径分成多个线性气体流动路径组并连接在 多个线性气体流路组的至少一部分串联。 制冷剂流路形成面具有形成为气体流路形成面上的多个线性气体流路的相反结构的多个线性制冷剂流路和形成为反向结构的制冷剂流路连接结构 的气体流路连接结构在气体流路形成面上并联连接多个线性制冷剂流路。

公开(公告)号：US20120299057A1

公开(公告)日：2012-11-29

申请号：US13569939

申请日：2012-08-08

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： H01L29/12

CPC分类号： H01L29/88 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66151 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device includes a p-type semiconductor layer and an n-type semiconductor layer that are joined by sandwiching a depletion layer with a thickness that allows transmission of a plurality of electrons and holes by direct-tunneling.

摘要翻译： 半导体器件包括p型半导体层和n型半导体层，其通过夹着具有允许通过直接隧道传输多个电子和空穴的厚度的耗尽层而被接合。

公开(公告)号：US08125047B2

公开(公告)日：2012-02-28

申请号：US12174010

申请日：2008-07-16

申请人： Tsuyoshi Takahashi

发明人： Tsuyoshi Takahashi

IPC分类号： H01L31/05

CPC分类号： H01L27/0605 ,  H01L21/743 ,  H01L21/7682 ,  H01L21/8252 ,  H01L23/66 ,  H01L29/0657 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/19033 ,  H01L2924/3011 ,  H01L2924/00

摘要： A semiconductor device comprises a buffer layer 16 of an i-InAlAs layer formed over an SI-InP substrate 14, insulating films 24, 36 of BCB formed over the buffer layer 16, and a coplanar interconnection including a signal line 52 and ground lines 54 formed over the insulating film 36, a cavity 46 is formed in the SI-InP substrate 14, the buffer layer 16 and the insulating film below the signal line 52, and pillar-shaped supports in the cavity 46 support the insulating films 34, 36 which are the ceiling of the cavity 46.

摘要翻译： 半导体器件包括在SI-InP衬底14上形成的i-InAlAs层的缓冲层16，形成在缓冲层16上的BCB的绝缘膜24,36，以及包括信号线52和接地线54的共面互连 形成在绝缘膜36上，在SI-InP衬底14，缓冲层16和信号线52下面的绝缘膜上形成空腔46，并且空腔46中的柱状支撑件支撑绝缘膜34,36 这是空腔46的天花板。

公开(公告)号：US20120043587A1

公开(公告)日：2012-02-23

申请号：US13207761

申请日：2011-08-11

申请人： Tsuyoshi TAKAHASHI

发明人： Tsuyoshi TAKAHASHI

IPC分类号： H01L29/778 ,  H01L21/335

CPC分类号： H01L29/205 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L29/66219 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/861

摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer formed in contact with the first semiconductor layer, and a third semiconductor layer of a second conductivity type formed in contact with the second semiconductor layer, the first semiconductor layer provided with a first semiconductor region at a given distance from an interface between the first semiconductor layer and the second semiconductor layer, and an impurity concentration of the first semiconductor region higher than an impurity concentration of the first semiconductor layer except where the first semiconductor region is formed.

摘要翻译： 半导体器件包括第一导电类型的第一半导体层，与第一半导体层接触形成的第二半导体层和与第二半导体层接触形成的第二导电类型的第三半导体层，第一半导体层 设置有从第一半导体层和第二半导体层之间的界面到给定距离的第一半导体区域，以及第一半导体区域的杂质浓度高于第一半导体区域的杂质浓度以外的第一半导体区域的杂质浓度 形成。

公开(公告)号：US07990751B2

公开(公告)日：2011-08-02

申请号：US12338313

申请日：2008-12-18

申请人： Yuichiro Masuda ,  Shigeo Furuta ,  Tsuyoshi Takahashi ,  Tetsuo Shimizu ,  Yasuhisa Naitoh ,  Masayo Horikawa

发明人： Yuichiro Masuda ,  Shigeo Furuta ,  Tsuyoshi Takahashi ,  Tetsuo Shimizu ,  Yasuhisa Naitoh ,  Masayo Horikawa

IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C7/00 ,  G11C7/22

CPC分类号： G11C13/00 ,  G11C13/0069 ,  G11C13/02 ,  G11C2013/009 ,  Y10S977/708 ,  Y10S977/723 ,  Y10S977/94 ,  Y10S977/943

摘要： A nanogap switching element is equipped with an inter-electrode gap portion including a gap of a nanometer order between a first electrode and a second electrode. A switching phenomenon is caused in the inter-electrode gap portion by applying a voltage between the first and second electrodes. The nanogap switching element is shifted from its low resistance state to its high resistance state by receiving a voltage pulse application of a first voltage value, and shifted from its high resistance state to its low resistance state by receiving a voltage pulse application of a second voltage value lower than the first voltage value. When the nanogap switching element is shifted from the high resistance state to the low resistance state, a voltage pulse of an intermediate voltage value between the first and second voltage values is applied thereto before the voltage pulse application of the second voltage value thereto.

摘要翻译： 纳米点开关元件配备有包括第一电极和第二电极之间的纳米级间隙的电极间间隙部分。 通过在第一和第二电极之间施加电压，在电极间间隙部分产生切换现象。 纳米点开关元件通过接收第一电压值的电压脉冲而从其低电阻状态转移到其高电阻状态，并且通过接收施加第二电压的电压脉冲从其高电阻状态转移到其低电阻状态 值低于第一电压值。 当纳米点开关元件从高电阻状态移动到低电阻状态时，在施加第二电压值的电压脉冲之前，施加第一和第二电压值之间的中间电压值的电压脉冲。

公开(公告)号：US20110147257A1

公开(公告)日：2011-06-23

申请号：US12995637

申请日：2009-04-20

申请人： Tsuyoshi Takahashi ,  Kayoko Sato ,  Mika Fukushima ,  Yuko Suda

发明人： Tsuyoshi Takahashi ,  Kayoko Sato ,  Mika Fukushima ,  Yuko Suda

IPC分类号： A61F13/84

CPC分类号： G09F23/00 ,  A61F13/551 ,  B65D2203/00

摘要： The present invention aims to provide a package for absorbent articles allows the consumers to recognize at a glance principal functional information of the article displayed on the front surface of the package and thereby to be adequately informed of these principal functions. Two or more function displays on the front surface of the article package may be divided into a main-function display element and sub-function display elements wherein the main-function display element is displayed to be accentuated in comparison with the respective sub-function display elements.

摘要翻译： 本发明的目的在于提供一种用于吸收制品的包装件，使得消费者能够一目了然地识别显示在包装前表面上的物品的主要功能信息，从而充分地了解这些主要功能。 物品包装的前表面上的两个或更多个功能显示器可以被划分为主功能显示元件和子功能显示元件，其中主功能显示元件被显示为与相应的子功能显示相比被加强 元素。

公开(公告)号：US20110104548A1

公开(公告)日：2011-05-05

申请号：US12914251

申请日：2010-10-28

申请人： Masao SAITO ,  Tomokazu Takashina ,  Tsuyoshi Takahashi

发明人： Masao SAITO ,  Tomokazu Takashina ,  Tsuyoshi Takahashi

IPC分类号： H01M10/50

CPC分类号： H01M10/0413 ,  H01M2/1072 ,  H01M6/42 ,  H01M10/613 ,  H01M10/625 ,  H01M10/647 ,  H01M10/6557 ,  H01M10/6563 ,  H01M10/6566

摘要： A power supply device includes rectangular battery cells 1, resin separators 2, end spacers 17, thick metal end plates 10, and coupling members 11. The separator 2 is inserted between the cells 1 to insulate adjacent cells 1 from each other, and in thermal contact with the cells 1. The end spacers 17 cover end battery cells 1 on the opposed end surfaces of a battery block composed of the cells 1 and the separators 2 alternately arranged. The end plates 10 cover the surfaces of the end spacers 17. The coupling members 11 couple the end plates 10 to each other. The separators 2 form gaps 4 for flowing air along the surfaces of the cells 1 in contact with the separators 2. The end spacers 17 have hollow layers 18 on their surfaces in contact with the cells 1, and define closed chambers.

摘要翻译： 电源装置包括矩形电池单元1，树脂隔板2，端部间隔件17，厚金属端板10和联接构件11.隔板2插入电池单元1之间，以使相邻电池单元1相互隔离， 与电池单元1接触。端部间隔件17覆盖由电池单元1和分隔件2交替布置的电池块的相对端面上的端部电池单元1。 端板10覆盖端部间隔件17的表面。联接构件11将端板10彼此连接。 分离器2形成用于沿着与隔板2接触的电池单元1的表面流动空气的间隙4.端部间隔件17在其与电池单元1接触的表面上具有中空层18，并且限定闭合室。

公开(公告)号：US20100257726A1

公开(公告)日：2010-10-14

申请号：US12756522

申请日：2010-04-08

申请人： Shigeo FURUTA ,  Touru Sumiya ,  Yuichiro Masuda ,  Tsuyoshi Takahashi ,  Yutaka Hayashi ,  Masatoshi Ono

发明人： Shigeo FURUTA ,  Touru Sumiya ,  Yuichiro Masuda ,  Tsuyoshi Takahashi ,  Yutaka Hayashi ,  Masatoshi Ono

IPC分类号： H01C17/00

CPC分类号： H01L45/1233 ,  H01L45/04 ,  H01L45/16 ,  Y10T29/49082 ,  Y10T29/49105

摘要： Disclosed is a fabrication method of an element with nanogap electrodes including a first electrode, a second electrode provided above the first electrode, and a gap provided between the first electrode and the second electrode, the gap being in an order of nanometer to allow resistive state to be switched by applying a predetermined voltage between the first electrode and the second electrode, the method comprising: forming the first electrode; forming a spacer on an upper surface of the first electrode; forming the second electrode in contact with an upper surface of the spacer; and removing the spacer to form the gap.

摘要翻译： 公开了一种具有纳米隙电极的元件的制造方法，其包括第一电极，设置在第一电极上方的第二电极和设置在第一电极和第二电极之间的间隙，间隙为纳米级，以允许电阻状态 通过在第一电极和第二电极之间施加预定电压进行切换，该方法包括：形成第一电极; 在所述第一电极的上表面上形成间隔物; 形成与间隔物的上表面接触的第二电极; 并移除间隔物以形成间隙。