发明申请
- 专利标题: METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING TRANSISTORS WITH DIFFERENT GATE STRUCTURES
- 专利标题(中): 制造具有不同门结构的晶体管的半导体器件的方法
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申请号: US12422849申请日: 2009-04-13
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公开(公告)号: US20090253256A1公开(公告)日: 2009-10-08
- 发明人: Hye-Lan Lee , Yu-Gyun Shin , Sang-Bom Kang , Hag-Ju Cho , Seong-Geon Park , Taek-Soo Jeon
- 申请人: Hye-Lan Lee , Yu-Gyun Shin , Sang-Bom Kang , Hag-Ju Cho , Seong-Geon Park , Taek-Soo Jeon
- 优先权: KR2005-29068 20050407
- 主分类号: H01L21/8239
- IPC分类号: H01L21/8239
摘要:
A semiconductor device has two transistors of different structure from each other. One of transistors is P-type and the other is N-type. One of the transistors includes a gate structure in which a polysilicon layer contacts a gate insulation film while the other transistor includes a gate structure in which a metal layer contacts a gate insulation film.