发明申请
- 专利标题: METHODS FOR PLANARIZING UNEVENNESS ON SURFACE OF WAFER PHOTORESIST LAYER AND WAFERS PRODUCED BY THE METHODS
- 专利标题(中): 在方法生产的波长光电子层和波长表面上平坦化的方法
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申请号: US12100716申请日: 2008-04-10
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公开(公告)号: US20090258322A1公开(公告)日: 2009-10-15
- 发明人: David Laurier Bernard , Paul William Dryer , Andrew Lee McNees
- 申请人: David Laurier Bernard , Paul William Dryer , Andrew Lee McNees
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A wafer has a substrate and a photoresist layer thereon with a surface that is planarized by positioning over a starting surface of the photoresist layer a gray-scale mask having a pattern that correlates with a gradient height profile of unevenness present on the starting surface, patterning the photoresist layer using the gray-scale mask to produce the pattern thereof in the photoresist layer which, in effect, produces a profile of evenness in the photoresist layer underlying the gradient height profile of unevenness, and developing the patterned photoresist layer such that only a three-dimensional portion thereof corresponding to the gradient height profile of unevenness located above the profile of evenness is removed which, in effect, leaves behind a resulting surface on the photoresist layer made substantially more even and thus substantially in a planarized condition.
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