发明申请
- 专利标题： METHODS OF FORMING PHASE-CHANGE MEMORY UNITS, AND METHODS OF MANUFACTURING PHASE-CHANGE MEMORY DEVICES USING THE SAME
- 专利标题（中）： 形成相变记忆单元的方法以及使用该方法制造相变存储器件的方法
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申请号： US12420888申请日： 2009-04-09
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公开(公告)号： US20090258477A1公开(公告)日： 2009-10-15
- 发明人: Kyung Chang Ryoo , Hong-Sik Jeong , Gi-Tae Jeong , Jung-Hoo Park , Yoon-Jong Song
- 申请人： Kyung Chang Ryoo , Hong-Sik Jeong , Gi-Tae Jeong , Jung-Hoo Park , Yoon-Jong Song
- 优先权： KR10-2008-0033916 20080411
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
In a method of forming a phase-change memory unit, a conductive layer is formed on a substrate having a trench. The conductive layer is planarized until the substrate is exposed to form a first electrode. A spacer partially covering the first electrode is formed. A phase-change material layer is formed on the first electrode and the second spacer. A second electrode is formed on the phase-change material layer. Reset/set currents of the phase-change memory unit may be reduced and deterioration of the phase-change material layer may be reduced and/or prevented.