利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.029 秒)

    Methods of operating magnetic random access memory device using spin injection and related devices
    4.
    发明申请
    Methods of operating magnetic random access memory device using spin injection and related devices 有权
    使用自旋注入和相关器件操作磁性随机存取存储器件的方法

    公开(公告)号：US20060034117A1

    公开(公告)日：2006-02-16

    申请号：US11201495

    申请日：2005-08-11

    申请人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

    发明人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16

    摘要： Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.

    摘要翻译： 提供了用于操作包括在衬底上具有磁性隧道结结构的存储单元的磁性随机存取存储器件的方法。 特别地，可以通过磁性隧道结结构提供写入电流脉冲，并且可以通过磁性隧道结结构提供写入磁场脉冲。 此外，写入磁场脉冲的至少一部分可以相对于写入电流脉冲的至少一部分在时间上重叠，并且写入电流脉冲的至少一部分和/或至少一部分 写入磁场脉冲可能在时间上相对于另一个不重叠。 还讨论了相关设备。

    MEMORY DEVICES WITH SELECTIVE PRE-WRITE VERIFICATION AND METHODS OF OPERATION THEREOF
    5.
    发明申请
    MEMORY DEVICES WITH SELECTIVE PRE-WRITE VERIFICATION AND METHODS OF OPERATION THEREOF 有权
    具有选择性预写验证的存储器件及其操作方法

    公开(公告)号：US20090285008A1

    公开(公告)日：2009-11-19

    申请号：US12419934

    申请日：2009-04-07

    申请人： Hong-Sik Jeong ,  Kwang-Jin Lee ,  Dae-Won Ha ,  Gi-Tae Jeong ,  Jung-Hyuk Lee

    发明人： Hong-Sik Jeong ,  Kwang-Jin Lee ,  Dae-Won Ha ,  Gi-Tae Jeong ,  Jung-Hyuk Lee

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C8/10 ,  G11C7/1006 ,  G11C13/0004 ,  G11C13/0035 ,  G11C13/0064 ,  G11C13/0069 ,  G11C16/3459 ,  G11C2013/0076

    摘要： A number of read cycles applied to a selected memory location of a memory device, such as a variable-resistance memory device, is monitored. Write data to be written to the selected memory location is received. Selective pre-write verifying and writing of the received write data to the selected memory location occurs based on the monitored number of read cycles. Selectively pre-write verifying and writing of the received write data may include, for example, writing received write data to the selected memory cell region without pre-write verification responsive to the monitored number of read cycles being greater than a predetermined number of read cycles

    摘要翻译： 监视应用于诸如可变电阻存储器件的存储器件的选定存储器位置的多个读周期。 接收要写入所选存储单元的写入数据。 基于所监视的读取周期数，对接收的写入数据进行选择性的预写入验证和写入。 选择性地预写入验证和写入所接收的写入数据可以包括例如将接收到的写入数据写入所选择的存储器单元区域，而无需预写入验证，响应于所监视的读取周期数大于预定数量的读取周期

    Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same
    6.
    发明授权
    Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same 失效
    磁性随机存取存储单元具有其上具有覆层的分割子数据线及其制造方法

    公开(公告)号：US07569401B2

    公开(公告)日：2009-08-04

    申请号：US12048082

    申请日：2008-03-13

    申请人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

    发明人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

    IPC分类号： H01L21/00

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

    摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

    摘要翻译： 磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。 磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。 只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。 此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。 第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。 还提供了制造磁性RAM单元的方法。

    Memory devices with selective pre-write verification and methods of operation thereof
    7.
    发明授权
    Memory devices with selective pre-write verification and methods of operation thereof 有权
    具有选择性预写验证的存储器件及其操作方法

    公开(公告)号：US07843741B2

    公开(公告)日：2010-11-30

    申请号：US12419934

    申请日：2009-04-07

    申请人： Hong-Sik Jeong ,  Kwang-Jin Lee ,  Dae-Won Ha ,  Gi-Tae Jeong ,  Jung-Hyuk Lee

    发明人： Hong-Sik Jeong ,  Kwang-Jin Lee ,  Dae-Won Ha ,  Gi-Tae Jeong ,  Jung-Hyuk Lee

    IPC分类号： G11C7/10

    CPC分类号： G11C8/10 ,  G11C7/1006 ,  G11C13/0004 ,  G11C13/0035 ,  G11C13/0064 ,  G11C13/0069 ,  G11C16/3459 ,  G11C2013/0076

    摘要： A number of read cycles applied to a selected memory location of a memory device, such as a variable-resistance memory device, is monitored. Write data to be written to the selected memory location is received. Selective pre-write verifying and writing of the received write data to the selected memory location occurs based on the monitored number of read cycles. Selectively pre-write verifying and writing of the received write data may include, for example, writing received write data to the selected memory cell region without pre-write verification responsive to the monitored number of read cycles being greater than a predetermined number of read cycles.

    摘要翻译： 监视应用于诸如可变电阻存储器件的存储器件的选定存储器位置的多个读周期。 接收要写入所选存储单元的写入数据。 基于所监视的读取周期数，对接收的写入数据进行选择性的预写入验证和写入。 选择性地预写入验证和写入所接收的写入数据可以包括例如将接收到的写入数据写入所选择的存储器单元区域，而无需预写入验证，响应于所监视的读取周期数大于预定数量的读取周期 。

    Magnetic Random Access Memory Cells Having Split Subdigit Lines Having Cladding Layers Thereon and Methods of Fabricating the Same
    8.
    发明申请
    Magnetic Random Access Memory Cells Having Split Subdigit Lines Having Cladding Layers Thereon and Methods of Fabricating the Same 失效
    磁性随机存取存储器单元分割具有包层的子数字线及其制作方法

    公开(公告)号：US20080160643A1

    公开(公告)日：2008-07-03

    申请号：US12048082

    申请日：2008-03-13

    申请人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

    发明人： Jae-Hyun Park ,  Hyeong-Jun Kim ,  Won-Cheol Jeong ,  Chang-Wook Jeong ,  Hong-sik Jeong ,  Gi-Tae Jeong

    IPC分类号： H01L43/12

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  H01L43/08 ,  H01L43/12

    摘要： Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.

    摘要翻译： 磁性RAM单元具有由包覆层包围的分割的子数字线，并且提供其制造方法。 磁性RAM单元包括在半导体衬底上形成的第一和第二子数字线。 只有第一子数字线的底表面和外侧壁被第一覆层图案覆盖。 此外，仅第二子数字线的底表面和外侧壁被第二包层图案覆盖。 第一子数字线的外侧壁位于远离第二子数字线的位置，第二子数字线的外侧壁位于第一子数字线的远侧。 还提供了制造磁性RAM单元的方法。

    Methods of operating magnetic random access memory device using spin injection and related devices
    9.
    发明授权
    Methods of operating magnetic random access memory device using spin injection and related devices 有权
    使用自旋注入和相关器件操作磁性随机存取存储器件的方法

    公开(公告)号：US07164598B2

    公开(公告)日：2007-01-16

    申请号：US11201495

    申请日：2005-08-11

    申请人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

    发明人： Won-Cheol Jeong ,  Ki-Nam Kim ,  Hong-Sik Jeong ,  Gi-Tae Jeong ,  Jae-Hyun Park

    IPC分类号： G11C11/00 ,  G11C11/15

    CPC分类号： G11C11/16

    摘要： Methods are provided for operating a magnetic random access memory device including a memory cell having a magnetic tunnel junction structure on a substrate. In particular, a writing current pulse may be provided through the magnetic tunnel junction structure, and a writing magnetic field pulse may be provided through the magnetic tunnel junction structure. In addition, at least a portion of the writing magnetic field pulse may be overlapping in time with respect to at least a portion of the writing current pulse, and at least a portion of the writing current pulse and/or at least a portion of the writing magnetic field pulse may be non-overlapping in time with respect to the other. Related devices are also discussed.

    摘要翻译： 提供了用于操作包括在衬底上具有磁性隧道结结构的存储单元的磁性随机存取存储器件的方法。 特别地，可以通过磁性隧道结结构提供写入电流脉冲，并且可以通过磁性隧道结结构提供写入磁场脉冲。 此外，写入磁场脉冲的至少一部分可以相对于写入电流脉冲的至少一部分在时间上重叠，并且写入电流脉冲的至少一部分和/或至少一部分 写入磁场脉冲可能在时间上相对于另一个不重叠。 还讨论了相关设备。