发明申请
- 专利标题： Double patterning method
- 专利标题（中）： 双重图案化方法
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申请号： US12216107申请日： 2008-06-30
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公开(公告)号： US20090258501A1公开(公告)日： 2009-10-15
- 发明人: Michael Chan
- 申请人： Michael Chan
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method of making a device includes forming a first photoresist layer over an underlying layer, patterning the first photoresist layer to form a first photoresist pattern, rendering the first photoresist pattern insoluble to a solvent, forming a second photoresist layer over the first photoresist pattern, patterning the second photoresist layer to form a second photoresist pattern over the underlying layer, and etching the underlying layer using both the first and the second photoresist patterns as a mask.
公开/授权文献
- US07713818B2 Double patterning method 公开/授权日：2010-05-11
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