发明申请
- 专利标题: Semiconductor device and manufacturing method thereof
- 专利标题(中): 半导体装置及其制造方法
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申请号: US12148319申请日: 2008-04-18
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公开(公告)号: US20090261476A1公开(公告)日: 2009-10-22
- 发明人: Chien-Ping Huang , Chin-Huang Chang , Chih-Ming Huang , Cheng-Hsu Hsiao , Chun-Chi Ke
- 申请人: Chien-Ping Huang , Chin-Huang Chang , Chih-Ming Huang , Cheng-Hsu Hsiao , Chun-Chi Ke
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 优先权: TW096113588 20080418
- 主分类号: H01L23/482
- IPC分类号: H01L23/482 ; H01L21/60
摘要:
A semiconductor device and a manufacturing method thereof are disclosed. The method includes the steps of providing a carrier board having conductive circuits disposed thereon and a plurality of chips with active surfaces having solder pads disposed thereon, wherein conductive bumps are disposed on the solder pads; mounting chips on the carrier board; filling the spacing between the chips with a dielectric layer and forming openings in the dielectric layer at periphery of each chip to expose the conductive circuits; forming a metal layer in the openings of the dielectric layer and at periphery of the active surface of the chips for electrically connecting the conductive bumps and the conductive circuits; and cutting along the dielectric layer between the chips and removing the carrier board to separate each chip and exposing the conductive circuits from the non-active surface.
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